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RHRD660S

Onsemi

RHRD660S by Onsemi

RHRD660S by Onsemi is a single diode with 600V reverse test voltage and 0.035us max reverse recovery time. Ideal for hyper ultra fast soft recovery applications, it has a max output current of 6A and operates b/w -65 to 175 °C.

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1k+

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Digiode

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Resion

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Andel Nordic

Denmark . 1,000 parts In-Stock

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$6.848

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$6.848

Authorized Procurement Solutions

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Kulean Microsystems

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A-Z Elektronik GmbH

Germany . 5,028 parts In-Stock

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SupplyDigital Components

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Kepictronics

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Corphita

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Supply Digital

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Problanco Electronics

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UHIMA Technologies

Türkiye . 539 parts In-Stock

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Corohmni

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Overview

Discover the innovative RHRD660S by Onsemi, a cutting-edge diode that offers unparalleled quality and reliability. Manufactured by Onsemi, a trusted industry leader, this diode is designed for hyper ultra-fast soft recovery applications. With a maximum reverse test voltage of 600V and a maximum output current of 6A, this diode provides outstanding performance in a variety of electronic systems. Experience the value and benefits of the RHRD660S, from its efficient power dissipation to its advanced avalanche technology. Upgrade your electronics with the RHRD660S and unleash the full potential of your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the diode, making it suitable for a variety of applications and environments.

Maximum Reverse Recovery Time: 0.035 us

The ultra fast reverse recovery time allows for quick switching speeds and efficient operation of the diode.

Maximum Reverse Current: 100 uA

Low reverse current helps in reducing power loss and improving overall efficiency of the diode.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature range ensures the diode can withstand varying temperature conditions without compromising performance.

Diode Type: RECTIFIER DIODE

Rectifier diodes are efficient in converting AC to DC, making this diode suitable for power supply applications.

Technical Specifications

Diodes & Rectifiers RHRD660S attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, PD-CASE

Application:

HYPER ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.1 V

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

50 W

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

RHRD660S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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