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RHRD660

Onsemi

RHRD660 by Onsemi

RHRD660 by Onsemi is a single rectifier diode with a reverse test voltage of 600V and max output current of 6A. It features an ultra-fast soft recovery time of 0.035us, making it ideal for hyper applications requiring high power dissipation up to 50W at temperatures ranging from -65 °C to 175°C.

Median Price

$0.811

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,577 parts In-Stock

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$1.200

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$1.200

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Digiode

USA . 2,346 parts In-Stock

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Bristol Electronics

USA . 960 parts In-Stock

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$0.422

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$0.315

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960

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$0.422

$0.315

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Resion

USA . 188 parts In-Stock

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Andel Nordic

Denmark . 500 parts In-Stock

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$4.275

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$4.104

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$4.104

500

$4.275

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$4.104

$4.104

SupplyDigital Components

Austria . 8,014 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,442 parts In-Stock

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5,442

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 3,873 parts In-Stock

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TANS Electronics

Latvia . 2,977 parts In-Stock

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Kulean Microsystems

USA . 2,139 parts In-Stock

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Corphita

USA . 1,631 parts In-Stock

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Supply Digital

USA . 1,073 parts In-Stock

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UHIMA Technologies

Türkiye . 200 parts In-Stock

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Corohmni

South Africa . 186 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the RHRD660 by Onsemi. Crafted with precision and expertise, this diode & rectifier offers unparalleled performance in a variety of applications. From hyper ultra-fast soft recovery to avalanche technology, this product is designed to deliver top-notch quality and reliability. With a maximum reverse test voltage of 600V and a maximum output current of 6A, the RHRD660 is the ultimate solution for your electronic needs. Experience the value and benefits this product brings to the table, and elevate your projects to new heights with Onsemi's exceptional innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a variety of applications.

Maximum Reverse Recovery Time: 0.035 us

Ensures fast switching speeds, making it ideal for high frequency applications.

Maximum Reverse Current: 100 uA

Low reverse current ensures efficient operation and minimal power loss.

Reverse Test Voltage: 600 V

Can handle high voltage applications, providing reliability and safety.

Application: HYPER ULTRA FAST SOFT RECOVERY

Designed for high performance and efficient energy conversion.

Maximum Operating Temperature: 175 °C

Can operate in a wide range of temperatures, making it versatile for various environments.

Maximum Power Dissipation: 50 W

Ability to dissipate high power levels, suitable for demanding applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying AC to DC, making it suitable for power supply applications.

Technical Specifications

Diodes & Rectifiers RHRD660 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, PD-CASE

Application:

HYPER ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.1 V

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T2

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Power Dissipation:

50 W

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

600 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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