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NZD3V6MUT5G

Onsemi

NZD3V6MUT5G by Onsemi

NZD3V6MUT5G by Onsemi is a Zener diode with a nominal reference voltage of 3.6V and max reverse test voltage of 1V. It operates in temperatures ranging from -55 to 150 °C and has a max power dissipation of 0.2W. This diode is ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.130

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,316 parts In-Stock

1+ parts

$0.130

100+ parts

$0.060

1k+ parts

$0.053

10k+ parts

$0.047

6,316

$0.130

$0.060

$0.053

$0.047

DigiKey

USA . 5,870 parts In-Stock

1+ parts

$0.130

100+ parts

$0.065

1k+ parts

$0.053

10k+ parts

$0.047

5,870

$0.130

$0.065

$0.053

$0.047

Flip Electronics (Authorized)

USA . 409,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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409,700

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 820 parts In-Stock

1+ parts

$0.210

100+ parts

-

1k+ parts

-

10k+ parts

-

820

$0.210

-

-

-

Digiode

USA . 2,388 parts In-Stock

1+ parts

$0.332

100+ parts

-

1k+ parts

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10k+ parts

-

2,388

$0.332

-

-

-

Flip Electronics

USA . 379,700 parts In-Stock

1+ parts

-

100+ parts

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379,700

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 944 parts In-Stock

1+ parts

$0.315

100+ parts

-

1k+ parts

-

10k+ parts

-

944

$0.315

-

-

-

Component Stockers USA

USA . 15,195 parts In-Stock

1+ parts

$0.340

100+ parts

$0.100

1k+ parts

$0.070

10k+ parts

$0.040

15,195

$0.340

$0.100

$0.070

$0.040

Corohmni

South Africa . 179 parts In-Stock

1+ parts

$0.350

100+ parts

-

1k+ parts

-

10k+ parts

-

179

$0.350

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10,000

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TANS Electronics

Latvia . 6,261 parts In-Stock

1+ parts

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6,261

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SupplyDigital Components

Austria . 5,639 parts In-Stock

1+ parts

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5,639

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Problanco Electronics

Mexico . 3,998 parts In-Stock

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3,998

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Kulean Microsystems

USA . 1,165 parts In-Stock

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1,165

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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69

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Overview

Discover the NZD3V6MUT5G by Onsemi, a high-quality Zener Diode that offers reliable performance and precision. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a variety of applications. With its single configuration and surface mount capability, this diode provides customers with a hassle-free solution for their electronics needs. Experience the value and benefits of this product, from its low reverse current to its wide operating temperature range. Trust Onsemi to deliver quality products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the zener diode, ensuring long-lasting performance.

Working Test Current: 5 mA

Suitable for low power applications, making it versatile for various electronic devices.

Maximum Reverse Current: 10 uA

Efficient in preventing reverse current flow, ensuring reliable operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ideal for applications where heat dissipation is a concern.

Nominal Reference Voltage: 3.6 V

Provides a stable reference voltage, ensuring consistent performance in circuitry.

Diode Element Material: SILICON

Silicon diodes offer high performance and reliability, making this zener diode a dependable choice.

Technical Specifications

Zener Diodes NZD3V6MUT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Nominal Reference Voltage:

3.6 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

NZD3V6MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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