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NZD3V0MUT5G

Onsemi

NZD3V0MUT5G by Onsemi

NZD3V0MUT5G by Onsemi is a Zener diode with 3V nominal reference voltage, 1.1V max forward voltage, and 10uA max reverse current. It is ideal for applications requiring precise voltage regulation in electronic circuits due to its unidirectional polarity and silicon diode element material. The diode operates within a temperature range of -55 to 150 °C and has a package style of chip carrier for surface mount assembly.

Median Price

$0.210

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,341 parts In-Stock

1+ parts

$0.210

100+ parts

$0.078

1k+ parts

$0.050

10k+ parts

$0.034

9,341

$0.210

$0.078

$0.050

$0.034

Flip Electronics (Authorized)

USA . 240,000 parts In-Stock

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Digiode

USA . 1,396 parts In-Stock

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$0.180

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1,396

$0.180

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Vyrian

USA . 1,895 parts In-Stock

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$0.190

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1,895

$0.190

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Flip Electronics

USA . 530,000 parts In-Stock

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530,000

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Distributors (Availability)

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Corphita

USA . 1,786 parts In-Stock

1+ parts

$0.171

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1,786

$0.171

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Corohmni

South Africa . 285 parts In-Stock

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$0.190

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285

$0.190

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QUARKTWIN TECHNOLOGY LTD

USA . 29,782 parts In-Stock

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29,782

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iodParts Technologies Inc.

India . 20,000 parts In-Stock

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Problanco Electronics

Mexico . 8,225 parts In-Stock

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SupplyDigital Components

Austria . 6,935 parts In-Stock

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6,935

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 2,007 parts In-Stock

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TANS Electronics

Latvia . 1,240 parts In-Stock

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UHIMA Technologies

Türkiye . 655 parts In-Stock

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655

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Overview

Unlocking a world of precision and reliability, the NZD3V0MUT5G by Onsemi is a game-changer in the realm of Zener Diodes. Crafted with excellence by Onsemi, this diode boasts exceptional quality and performance for various applications. Whether you're looking to stabilize voltages or regulate currents, this Zener Diode is your go-to solution. Trust in Onsemi to deliver unmatched value and benefits, providing customers with the advantage they need to succeed in their projects. Elevate your electronics with the NZD3V0MUT5G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, increasing its durability and reliability.

Working Test Current: 5 mA

Suitable for low-power applications and ensures stable performance under specified conditions.

Maximum Reverse Current: 10 uA

Low reverse current ensures efficient operation and prevent damage to the diode.

Maximum Voltage Tolerance: 5 %

Provides accurate and consistent voltage regulation, making it ideal for precision applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various environments and applications.

Nominal Reference Voltage: 3 V

Stable reference voltage ensures reliable performance in voltage regulation circuits.

Technical Specifications

Zener Diodes NZD3V0MUT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Nominal Reference Voltage:

3 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

NZD3V0MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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