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NZ8F6V8SMX2WT5G

Onsemi

NZ8F6V8SMX2WT5G by Onsemi

NZ8F6V8SMX2WT5G by Onsemi is a Zener diode with 6.8V nominal reference voltage, 3.5V reverse test voltage, and 2.35% max voltage tolerance. It is ideal for applications requiring precise voltage regulation in temperature ranges from -65 to 150 °C, with a small outline package style for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,191 parts In-Stock

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Digiode

USA . 1,900 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 234,560 parts In-Stock

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$0.410

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$0.410

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AZTECH Wire

Italy . 157 parts In-Stock

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$21.840

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SupplyDigital Components

Austria . 4,191 parts In-Stock

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Problanco Electronics

Mexico . 3,567 parts In-Stock

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TANS Electronics

Latvia . 2,911 parts In-Stock

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UHIMA Technologies

Türkiye . 489 parts In-Stock

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Corphita

USA . 444 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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Kulean Microsystems

USA . 29 parts In-Stock

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Overview

Discover the NZ8F6V8SMX2WT5G Zener Diode by Onsemi, a high-quality product designed to meet your electronic component needs. Manufactured by Onsemi, a trusted name in the industry, this Zener diode offers reliable performance and durability. Ideal for a wide range of applications, this Zener diode provides precise voltage regulation and protection in various circuits. With its small outline package style and nickel palladium gold terminal finish, this diode is easy to install and ensures long-term functionality. Trust Onsemi's expertise and choose the NZ8F6V8SMX2WT5G Zener Diode for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic or epoxy materials provide durability and protection for the diode, making it suitable for a variety of environments.

Working Test Current: 5 mA

The 5 mA working test current ensures stable performance and reliability under normal operating conditions.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Maximum Reverse Current: 0.5 uA

Low maximum reverse current ensures minimal power loss and improves overall efficiency of the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this zener diode can withstand elevated temperatures without compromising performance.

Maximum Power Dissipation: 0.25 W

The diode's ability to dissipate up to 0.25 watts of power ensures stability and reliability in high-power applications.

Diode Type: ZENER DIODE

Being a zener diode, this product is specifically designed for voltage regulation and stabilization, making it a perfect choice for such applications.

Technical Specifications

Zener Diodes NZ8F6V8SMX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

40 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

60 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Nominal Reference Voltage:

6.8 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3.5 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2.35 %

Working Test Current:

5 mA

Trade Compliance

NZ8F6V8SMX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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