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NZ8F3V6SMX2WT5G

Onsemi

NZ8F3V6SMX2WT5G by Onsemi

NZ8F3V6SMX2WT5G by Onsemi is a Zener diode with a working test current of 5 mA and max reverse current of 10 uA. It is a surface mount device with a package style of small outline, ideal for applications requiring precise voltage regulation in temperature-sensitive environments. With a nominal reference voltage of 3.6 V and max power dissipation of 0.25 W, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,272 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 328 parts In-Stock

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$20.930

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QUARKTWIN TECHNOLOGY LTD

USA . 26,931 parts In-Stock

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SupplyDigital Components

Austria . 1,942 parts In-Stock

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Problanco Electronics

Mexico . 1,688 parts In-Stock

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TANS Electronics

Latvia . 1,528 parts In-Stock

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Corphita

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Corohmni

South Africa . 415 parts In-Stock

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Kulean Microsystems

USA . 221 parts In-Stock

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UHIMA Technologies

Türkiye . 54 parts In-Stock

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Overview

Discover the NZ8F3V6SMX2WT5G by Onsemi, a high-quality Zener diode that offers reliable performance and precise voltage regulation. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. From power supplies to voltage regulators, this Zener diode ensures stable and consistent operation. With its small outline package and nickel palladium gold terminal finish, the NZ8F3V6SMX2WT5G delivers exceptional value and performance. Experience the benefits of this versatile component and elevate your electronic designs today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies the circuit design and reduces complexity.

Working Test Current: 5 mA

Allows for efficient testing and operation within safe current limits.

Surface Mount: YES

Facilitates easy and secure mounting on circuit boards for compact designs.

Maximum Reverse Current: 10 uA

Low reverse current ensures minimal power loss and heat generation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for industrial applications.

Maximum Power Dissipation: 0.25 W

Capable of dissipating power efficiently to prevent overheating during operation.

Diode Type: ZENER DIODE

Zener diode functionality allows for precise voltage regulation and protection in circuits.

Technical Specifications

Zener Diodes NZ8F3V6SMX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Nominal Reference Voltage:

3.6 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

3.33 %

Working Test Current:

5 mA

Trade Compliance

NZ8F3V6SMX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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