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NZ8F3V0SMX2WT5G

Onsemi

NZ8F3V0SMX2WT5G by Onsemi

NZ8F3V0SMX2WT5G by Onsemi is a Zener diode with a max reverse current of 10uA and working test current of 5mA. It is a surface mount device with a package style of small outline, suitable for applications requiring precise voltage regulation in electronic circuits. With a nominal reference voltage of 3V and max power dissipation of 0.25W, it operates efficiently within temperatures ranging from -65 to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Flip Electronics

USA . 136,000 parts In-Stock

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Vyrian

USA . 8,043 parts In-Stock

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Digiode

USA . 2,326 parts In-Stock

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AZTECH Wire

Italy . 673 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 6,694 parts In-Stock

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Kulean Microsystems

USA . 5,877 parts In-Stock

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TANS Electronics

Latvia . 4,449 parts In-Stock

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Corphita

USA . 1,913 parts In-Stock

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SupplyDigital Components

Austria . 580 parts In-Stock

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UHIMA Technologies

Türkiye . 476 parts In-Stock

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Corohmni

South Africa . 216 parts In-Stock

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Overview

Discover the NZ8F3V0SMX2WT5G by Onsemi, a high-quality Zener Diode that offers reliable performance and precision. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. From voltage regulation to signal processing, this product delivers exceptional value and benefits to customers. With its advanced technology and durable construction, the NZ8F3V0SMX2WT5G provides superior performance and efficiency, making it an essential component for any electronic project. Choose Onsemi for quality you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the Zener diode.

Working Test Current: 5 mA

The working test current of 5 mA indicates the current at which the Zener diode operates effectively and accurately.

Surface Mount: YES

Being surface mountable makes the Zener diode easy to install and suitable for a variety of applications.

Maximum Reverse Current: 10 uA

With a low maximum reverse current, this Zener diode ensures efficient performance and minimal power loss in reverse bias conditions.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance of 5% ensures consistent and reliable voltage regulation by the Zener diode.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this Zener diode to function reliably even in elevated temperature environments.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25 W, this Zener diode can handle moderate power levels without overheating.

Technical Specifications

Zener Diodes NZ8F3V0SMX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Nominal Reference Voltage:

3 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

NZ8F3V0SMX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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