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NZ3F9V1T1G

Onsemi

NZ3F9V1T1G by Onsemi

NZ3F9V1T1G by Onsemi is a Zener diode with a nominal reference voltage of 9.1V and max power dissipation of 0.8W. It operates in temperatures ranging from -65 °C to 150°C, making it suitable for various applications requiring precise voltage regulation in compact electronic devices. With a unidirectional polarity and flat terminal form, this surface-mount diode is ideal for circuit protection and voltage stabilization in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,250 parts In-Stock

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Digiode

USA . 1,629 parts In-Stock

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AZTECH Wire

Italy . 478 parts In-Stock

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$19.290

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478

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Problanco Electronics

Mexico . 6,838 parts In-Stock

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TANS Electronics

Latvia . 3,729 parts In-Stock

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SupplyDigital Components

Austria . 2,281 parts In-Stock

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Corphita

USA . 2,217 parts In-Stock

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Kulean Microsystems

USA . 836 parts In-Stock

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UHIMA Technologies

Türkiye . 476 parts In-Stock

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Corohmni

South Africa . 275 parts In-Stock

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Overview

Elevate your electronic designs with the NZ3F9V1T1G by Onsemi, a top-tier manufacturer known for delivering superior quality and reliability. As a Zener Diode, this component is perfect for voltage regulation in a variety of applications. The NZ3F9V1T1G offers unmatched value, providing customers with precise voltage control and protection against power surges. With its small outline package and high operating temperature range, this diode is a versatile and essential tool for any electronics enthusiast or professional. Trust Onsemi and experience the benefits of the NZ3F9V1T1G in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, ensuring longevity and reliability in various applications.

Working Test Current: 5 mA

The low working test current of 5 mA allows for efficient operation with low power consumption, making it suitable for battery-powered devices.

Surface Mount: YES

The surface mount capability enables easy and convenient installation on circuit boards, saving space and simplifying the manufacturing process.

Maximum Voltage Tolerance: 6.08%

The tight maximum voltage tolerance of 6.08% ensures precise voltage regulation and protection against voltage spikes, making it ideal for applications requiring stable voltage output.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the diode to withstand extreme heat conditions, contributing to its reliability in various environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65 °C enables the diode to function effectively in cold environments without compromising performance.

Maximum Power Dissipation: 0.8 W

The high maximum power dissipation of 0.8 W allows the diode to handle power surges effectively, ensuring protection against overloading and improving overall durability.

Nominal Reference Voltage: 9.1 V

The nominal reference voltage of 9.1 V provides accurate voltage regulation, making it suitable for precision electronic circuits and voltage reference applications.

Technical Specifications

Zener Diodes NZ3F9V1T1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.8 W

Nominal Reference Voltage:

9.1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

6.08 %

Working Test Current:

5 mA

Trade Compliance

NZ3F9V1T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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