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NZ3F47VT1G

Onsemi

NZ3F47VT1G by Onsemi

NZ3F47VT1G by Onsemi is a Zener diode with a nominal reference voltage of 47V and max power dissipation of 0.8W. It operates in temperatures ranging from -65 °C to 150°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a surface-mount configuration and unidirectional polarity, this diode is ideal for compact designs where space is limited.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,595 parts In-Stock

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Digiode

USA . 1,224 parts In-Stock

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AZTECH Wire

Italy . 551 parts In-Stock

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$17.480

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Component Stockers USA

USA . 380 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 4,993 parts In-Stock

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Kulean Microsystems

USA . 4,509 parts In-Stock

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SupplyDigital Components

Austria . 3,193 parts In-Stock

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TANS Electronics

Latvia . 2,493 parts In-Stock

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Corphita

USA . 1,120 parts In-Stock

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UHIMA Technologies

Türkiye . 713 parts In-Stock

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Corohmni

South Africa . 88 parts In-Stock

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Overview

Unlock the power of precision with the Onsemi NZ3F47VT1G Zener Diode. Manufactured by industry leader Onsemi, this high-quality component offers unparalleled performance and reliability. Ideal for a wide range of applications, this Zener diode provides stable voltage regulation in a compact package. With its impressive maximum voltage tolerance and nominal reference voltage of 47V, customers can trust in the consistent and accurate operation of their circuits. Experience the benefits of superior quality and precision with the Onsemi NZ3F47VT1G Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides good insulation and protection for the diode, ensuring long-term reliability and durability.

Working Test Current: 2 mA

The low working test current allows for efficient operation and helps prevent overheating of the diode.

Surface Mount: YES

Being a surface mount diode makes it easy to integrate into modern electronic circuits, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand a wide range of environmental conditions and provide stable performance.

Nominal Reference Voltage: 47 V

The specific nominal reference voltage of 47 V makes this diode suitable for applications requiring a precise voltage regulation.

Technical Specifications

Zener Diodes NZ3F47VT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.8 W

Nominal Reference Voltage:

47 V

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

6.38 %

Working Test Current:

2 mA

Trade Compliance

NZ3F47VT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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