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NZ3F18VT1G

Onsemi

NZ3F18VT1G by Onsemi

NZ3F18VT1G by Onsemi is a Zener diode with 18V nominal reference voltage and 6.41% max voltage tolerance. It operates b/w -65 to 150 °C, dissipating up to 0.8W power. Ideal for applications requiring precise voltage regulation in compact electronic circuits due to its small outline package style and unidirectional polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,109 parts In-Stock

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Digiode

USA . 2,000 parts In-Stock

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AZTECH Wire

Italy . 840 parts In-Stock

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$13.520

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Component Stockers USA

USA . 218 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 6,333 parts In-Stock

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TANS Electronics

Latvia . 6,040 parts In-Stock

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Problanco Electronics

Mexico . 5,305 parts In-Stock

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Kulean Microsystems

USA . 4,169 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 432 parts In-Stock

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Corohmni

South Africa . 301 parts In-Stock

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Overview

Discover the NZ3F18VT1G by Onsemi, a top-quality Zener diode that guarantees superior performance and reliability. Manufactured by Onsemi, a renowned leader in the industry, this diode is perfect for a wide range of applications. From voltage regulation to signal conditioning, this product offers exceptional value with its precise operation and high efficiency. Embrace the benefits of the NZ3F18VT1G and elevate your projects to new heights with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring reliability and durability.

Working Test Current: 5 mA

Suitable for low power applications, making it versatile for various electronic circuits.

Surface Mount: YES

Makes it easy to solder onto circuit boards, saving space and allowing for efficient assembly.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating conditions.

Nominal Reference Voltage: 18 V

Provides a stable reference voltage for regulating power in circuits, ensuring accurate performance.

Technical Specifications

Zener Diodes NZ3F18VT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.8 W

Nominal Reference Voltage:

18 V

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

6.41 %

Working Test Current:

5 mA

Trade Compliance

NZ3F18VT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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