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NVTJD4001NT1G

Onsemi

NVTJD4001NT1G by Onsemi

NVTJD4001NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 30V DS Breakdown Voltage, 0.25A Drain Current, and 2.5 ohm Drain-Source Resistance. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8,855 parts In-Stock

1+ parts

$0.265

100+ parts

$0.100

1k+ parts

$0.089

10k+ parts

$0.080

8,855

$0.265

$0.100

$0.089

$0.080

Newark

USA . 3,895 parts In-Stock

1+ parts

$0.387

100+ parts

$0.174

1k+ parts

$0.103

10k+ parts

-

3,895

$0.387

$0.174

$0.103

-

Mouser Electronics

USA . 934,655 parts In-Stock

1+ parts

$0.490

100+ parts

$0.190

1k+ parts

$0.127

10k+ parts

$0.107

934,655

$0.490

$0.190

$0.127

$0.107

DigiKey

USA . 66,082 parts In-Stock

1+ parts

$0.490

100+ parts

$0.190

1k+ parts

$0.127

10k+ parts

$0.092

66,082

$0.490

$0.190

$0.127

$0.092

Rochester

USA . 189,000 parts In-Stock

1+ parts

-

100+ parts

$0.099

1k+ parts

$0.082

10k+ parts

$0.073

189,000

-

$0.099

$0.082

$0.073

Avnet

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

39,000

-

-

-

-

Farnell

UK . 9,105 parts In-Stock

1+ parts

-

100+ parts

$0.128

1k+ parts

$0.125

10k+ parts

-

9,105

-

$0.128

$0.125

-

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.080

9,000

-

-

-

$0.080

Master Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.065

9,000

-

-

-

$0.065

Element14

Singapore . 8,445 parts In-Stock

1+ parts

-

100+ parts

$0.139

1k+ parts

$0.137

10k+ parts

-

8,445

-

$0.139

$0.137

-

Chip1Stop

Japan . 2,750 parts In-Stock

1+ parts

-

100+ parts

$0.094

1k+ parts

$0.070

10k+ parts

$0.061

2,750

-

$0.094

$0.070

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,683 parts In-Stock

1+ parts

$0.077

100+ parts

-

1k+ parts

-

10k+ parts

-

1,683

$0.077

-

-

-

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$0.133

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.133

-

-

-

TME

Poland . 2,712 parts In-Stock

1+ parts

$0.330

100+ parts

$0.148

1k+ parts

$0.106

10k+ parts

-

2,712

$0.330

$0.148

$0.106

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Flip Electronics

USA . 2,805,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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2,805,000

-

-

-

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Vyrian

USA . 175,058 parts In-Stock

1+ parts

-

100+ parts

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175,058

-

-

-

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IBS Electronics

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.091

96,000

-

-

-

$0.091

NAC Semi

USA . 69,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.347

69,000

-

-

-

$0.347

Cyclops Electronics Ltd

UK . 32,740 parts In-Stock

1+ parts

-

100+ parts

-

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-

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32,740

-

-

-

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Semtec, LLC

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

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12,000

-

-

-

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Bristol Electronics

USA . 445 parts In-Stock

1+ parts

-

100+ parts

$0.188

1k+ parts

$0.113

10k+ parts

-

445

-

$0.188

$0.113

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 161,223 parts In-Stock

1+ parts

$0.060

100+ parts

-

1k+ parts

-

10k+ parts

-

161,223

$0.060

-

-

-

Corohmni

South Africa . 481 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

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481

$0.071

-

-

-

Corphita

USA . 242 parts In-Stock

1+ parts

$0.073

100+ parts

-

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242

$0.073

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Continental Prestige Electronics

USA . 6,600 parts In-Stock

1+ parts

$0.133

100+ parts

-

1k+ parts

-

10k+ parts

$0.130

6,600

$0.133

-

-

$0.130

Argo Parts USA

USA . 100 parts In-Stock

1+ parts

$0.133

100+ parts

-

1k+ parts

-

10k+ parts

$0.129

100

$0.133

-

-

$0.129

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.133

100+ parts

-

1k+ parts

$0.126

10k+ parts

$0.124

50

$0.133

-

$0.126

$0.124

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.827

100+ parts

$0.753

1k+ parts

$0.678

10k+ parts

-

3,000

$0.827

$0.753

$0.678

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ChipstoGo Electronic ltd

UK . 30,000 parts In-Stock

1+ parts

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30,000

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Computer Components Inc. - USA

USA . 26,517 parts In-Stock

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26,517

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Kepictronics

USA . 22,206 parts In-Stock

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22,206

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Lixinc

USA . 6,818 parts In-Stock

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6,818

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SupplyDigital Components

Austria . 6,442 parts In-Stock

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6,442

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Problanco Electronics

Mexico . 2,006 parts In-Stock

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2,006

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Kulean Microsystems

USA . 1,677 parts In-Stock

1+ parts

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100+ parts

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1,677

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UHIMA Technologies

Türkiye . 781 parts In-Stock

1+ parts

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781

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TANS Electronics

Latvia . 475 parts In-Stock

1+ parts

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475

-

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-

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Overview

Experience the superior performance and reliability of Onsemi's NVTJD4001NT1G Small Signal Field Effect Transistor. With a focus on quality and innovation, Onsemi is a trusted manufacturer in the industry. Ideal for switching applications, this N-Channel FET offers enhanced efficiency and functionality with its separate elements, built-in diode, and resistor configuration. Whether you're looking to improve your electronic devices or enhance your projects, the NVTJD4001NT1G delivers unmatched value and benefits to customers seeking top-notch performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and control, making it suitable for a wide range of applications requiring N-channel FETs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Allows for versatile circuit design with added functionalities like built-in diode and resistor, saving space and simplifying the circuit layout.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient performance in switching operations.

Surface Mount: YES

Enables easy and convenient mounting on PCBs, reducing assembly time and costs.

Maximum Drain Current (Abs) (ID): 0.25 A

Can handle relatively high current levels, suitable for applications requiring moderate power handling capability.

Maximum Power Dissipation (Abs): 0.272 W

Efficient power handling capacity and low power dissipation, making it energy-efficient and reliable in operation.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for applications where temperature fluctuations are expected.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments, ensuring performance in a wide range of conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for high switching speeds, low power consumption, and reliable operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVTJD4001NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

12 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NVTJD4001NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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