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NIV6160MT2TWG

Onsemi

NIV6160MT2TWG by Onsemi

NIV6160MT2TWG by Onsemi is a Power Management IC with AEC-Q100 screening for automotive applications. It features a nominal voltage of 14V, small outline package style, and an adjustable threshold. With a wide operating temperature range from -40 to 125 °C, this IC is ideal for automotive power supply support circuits in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,147 parts In-Stock

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Digiode

USA . 196 parts In-Stock

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SupplyDigital Components

Austria . 8,095 parts In-Stock

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Problanco Electronics

Mexico . 7,707 parts In-Stock

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Kulean Microsystems

USA . 2,712 parts In-Stock

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Corphita

USA . 1,643 parts In-Stock

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TANS Electronics

Latvia . 635 parts In-Stock

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Corohmni

South Africa . 479 parts In-Stock

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UHIMA Technologies

Türkiye . 207 parts In-Stock

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Overview

Experience the superior performance and reliability of the NIV6160MT2TWG by Onsemi. This power management IC is designed to meet the highest industry standards, making it ideal for automotive applications. With a small outline, heat sink, and very thin profile package style, this product offers unmatched convenience and versatility. Trust Onsemi's expertise in power supply support circuits to deliver the quality and efficiency you need. Upgrade your automotive electronics with the NIV6160MT2TWG today.

Feature Benefit Bullets

Surface Mount: YES

This feature allows for easy and convenient installation on the circuit board, saving time and effort during assembly.

Screening Level: AEC-Q100

This indicates that the product meets automotive industry standards for reliability and quality, making it a suitable choice for automotive applications.

Nominal Supply Voltage: 14V

With a high nominal supply voltage, this product can accommodate a wide range of power requirements, making it versatile for different applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance even in demanding conditions, making it suitable for automotive and industrial applications.

Adjustable Threshold: YES

The ability to adjust the threshold allows for customization and optimization of the device to meet specific requirements, increasing flexibility in usage.

Technical Specifications

Power Management ICs NIV6160MT2TWG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-XDSO-N12

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC12,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

.8 mm

Nominal Supply Voltage (Vsup):

14 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3 mm

Trade Compliance

NIV6160MT2TWG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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