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NIS6160MT2TWG

Onsemi

NIS6160MT2TWG by Onsemi

NIS6160MT2TWG by Onsemi is a Power Management IC with 12 terminals, operating temperature range of -40 to 125 °C, and adjustable threshold. It is designed for automotive applications requiring a nominal voltage of 14V in a small outline package shape suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,292 parts In-Stock

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Digiode

USA . 351 parts In-Stock

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Kulean Microsystems

USA . 6,049 parts In-Stock

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Problanco Electronics

Mexico . 4,755 parts In-Stock

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TANS Electronics

Latvia . 2,343 parts In-Stock

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SupplyDigital Components

Austria . 1,715 parts In-Stock

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UHIMA Technologies

Türkiye . 726 parts In-Stock

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Corphita

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Corohmni

South Africa . 83 parts In-Stock

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Overview

Power up your devices with the NIS6160MT2TWG by Onsemi, a high-quality Power Management IC designed to meet the demands of various applications. With its small outline, heat sink profile, and automotive-grade temperature grade, this IC is perfect for automotive electronics, consumer electronics, and industrial applications. Enjoy the benefits of reliable performance, efficient power management, and adjustable threshold settings, making it a valuable addition to your project. Trust in Onsemi's reputation for excellence and innovation, and take your designs to the next level with the NIS6160MT2TWG.

Feature Benefit Bullets

Surface Mount: YES

Surface mount packaging allows for easy and efficient installation on circuit boards, making this product suitable for modern manufacturing processes.

Nominal Supply Voltage (Vsup): 14V

With a nominal supply voltage of 14V, this power management IC can effectively handle power requirements within this voltage range, providing stability and reliability.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures that this power management IC can withstand harsh environmental conditions and thermal stress, increasing its durability and longevity.

Terminal Position: DUAL

The dual terminal position allows for flexible and customizable connections, enabling the IC to be used in various circuit configurations for optimal performance.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this power management IC meets the specific requirements and standards for use in vehicles, ensuring reliable operation in automotive environments.

Technical Specifications

Power Management ICs NIS6160MT2TWG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-XDSO-N12

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC12,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.8 mm

Nominal Supply Voltage (Vsup):

14 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3 mm

Trade Compliance

NIS6160MT2TWG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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