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NIS6160MT1TWG

Onsemi

NIS6160MT1TWG by Onsemi

NIS6160MT1TWG by Onsemi is a Power Management IC with 12 terminals, suitable for automotive applications. It has a nominal voltage of 14V, adjustable threshold, and operates in temperatures ranging from -40 to 125 °C. This surface-mount IC comes in a small outline package shape with a very thin profile.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,238 parts In-Stock

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Digiode

USA . 1,277 parts In-Stock

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Problanco Electronics

Mexico . 7,961 parts In-Stock

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SupplyDigital Components

Austria . 6,970 parts In-Stock

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Kulean Microsystems

USA . 6,346 parts In-Stock

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TANS Electronics

Latvia . 3,553 parts In-Stock

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Corphita

USA . 2,172 parts In-Stock

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UHIMA Technologies

Türkiye . 337 parts In-Stock

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Corohmni

South Africa . 92 parts In-Stock

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Overview

Experience the next level of power management with the NIS6160MT1TWG by Onsemi. Designed to meet the highest quality standards, this Power Management IC offers unparalleled reliability and performance. With its surface mount capability and automotive-grade temperature grade, this versatile device is perfect for a wide range of applications. From power supply support circuits to automotive systems, the NIS6160MT1TWG provides customers with exceptional value, benefits, and advantages that will elevate their projects to new heights. Choose Onsemi for cutting-edge technology and superior quality in every product.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Package Shape: SQUARE

Square package shape helps in efficient space utilization on the circuit board, allowing for more components to be fitted in a limited space.

Nominal Supply Voltage (Vsup): 14 V

Suitable for a wide range of applications requiring a 14V power supply, providing flexibility and compatibility.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug and very thin profile package style allows for efficient heat dissipation and compact design, ideal for space-constrained applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this power management IC can withstand high temperature environments and ensures reliable performance.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely low temperatures down to -40 °C, making it suitable for a wide range of operating conditions.

Terminal Position: DUAL

Dual terminal position ensures secure and stable connection on the circuit board, enhancing reliability and performance.

Maximum Seated Height: 0.8 mm

Low maximum seated height of 0.8mm enables compact and slim designs, suitable for applications with limited space constraints.

Width (mm): 3 mm

Compact width of 3mm allows for efficient board layout and integration in tight spaces.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

Designed specifically as a power supply support circuit, ensuring efficient power management and regulation for various applications.

Length: 3 mm

Compact length of 3mm enables space-saving designs and ease of integration in compact electronic devices.

Temperature Grade: AUTOMOTIVE

Automotive temperature grade ensures reliable operation in high-temperature environments typically found in automotive applications.

Terminal Form: NO LEAD

No-lead terminal form provides a reliable and solder-free connection, reducing the risk of solder joint failures and improving overall product reliability.

Terminal Pitch: 0.5 mm

Fine terminal pitch of 0.5mm allows for precise and compact board layout, optimizing space utilization and improving overall design efficiency.

Adjustable Threshold: YES

The ability to adjust the threshold allows for customization and fine-tuning of the power management IC based on specific application requirements, providing flexibility and versatility.

Technical Specifications

Power Management ICs NIS6160MT1TWG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-XDSO-N12

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC12,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.8 mm

Nominal Supply Voltage (Vsup):

14 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3 mm

Trade Compliance

NIS6160MT1TWG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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