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NHPM260T3G

Onsemi

NHPM260T3G by Onsemi

NHPM260T3G by Onsemi is a single rectifier diode with a max forward voltage of 3.8V and output current of 2A. It has a fast reverse recovery time of 0.03us and low reverse current of 0.5uA, making it ideal for efficiency applications. With a max operating temperature of 175 °C and peak reflow temperature of 260°C, this diode is suitable for various electronic devices requiring high performance in harsh environments.

Median Price

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UHIMA Technologies

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Problanco Electronics

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Overview

Discover the NHPM260T3G by Onsemi, a high-quality rectifier diode perfect for efficiency applications. Manufactured by industry leader Onsemi, this diode offers customers incredible value and benefits. With a maximum output current of 2A and a maximum reverse recovery time of 0.03us, this diode provides reliable performance in a compact package. Whether you're looking to improve power efficiency or enhance your electronic designs, the NHPM260T3G is the perfect solution for your needs. Experience the quality and advantages that Onsemi brings to the table with this exceptional diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection and durability for the diode, ensuring a longer lifespan.

Config: SINGLE

The single configuration simplifies the setup and installation process, making it ideal for straightforward applications.

Surface Mount: YES

The surface mount capability allows for easy installation on circuit boards, saving space and making it suitable for compact designs.

Maximum Reverse Recovery Time: 0.03 us

With a fast reverse recovery time, this diode ensures efficient switching and minimizes energy loss, making it suitable for high-speed applications.

Maximum Reverse Current: 0.5 uA

The low reverse current ensures minimal power loss and enhances overall efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into circuit layouts and provides a compact and organized appearance.

Application: EFFICIENCY

Designed for efficiency applications, this diode is optimized to deliver high performance and reduce energy wastage.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this diode can withstand harsh environmental conditions, ensuring reliable operation.

Minimum Operating Temperature: -65 °C

The wide temperature range allows for operation in both hot and cold environments, making it versatile for various applications.

Terminal Finish: TIN

The tin finish provides excellent conductivity and solderability, ensuring secure connections during installation.

Terminal Position: SINGLE

The single terminal position simplifies the connection process, reducing chances of errors in installation.

Case Connection: CATHODE

The cathode case connection design simplifies circuit layouts and enables easier identification of polarity during installation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC to DC, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 3.8 V

The low forward voltage drop ensures minimal power loss and enhances the efficiency of the circuit.

Maximum Output Current: 2 A

With a high output current capacity, this diode can handle demanding loads and ensure stable operation.

Terminal Form: GULL WING

The gull wing terminal form provides secure mechanical support and easy soldering, ensuring reliable connections.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high reverse voltage rating, this diode can handle high voltage applications and provide reliable protection.

Maximum Non Repetitive Peak Forward Current: 15 A

The high non-repetitive peak forward current rating ensures the diode can withstand short-term overload conditions without damage.

Diode Element Material: SILICON

Silicon is a common and reliable material for diode elements, ensuring stable performance and high durability.

Technical Specifications

Diodes & Rectifiers NHPM260T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

3.8 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

15 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.03 us

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NHPM260T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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