Loading...

NHPM120T3G

Onsemi

NHPM120T3G by Onsemi

NHPM120T3G by Onsemi is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 200V. It operates in temperatures ranging from -65 °C to 175°C, making it suitable for various electronic applications requiring fast reverse recovery time of 0.025us. The diode's small outline package style and gull wing terminal form enable surface mount installation in compact electronic devices.

Median Price

$0.043

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 10,833 parts In-Stock

1+ parts

$0.062

100+ parts

$0.030

1k+ parts

$0.015

10k+ parts

$0.014

10,833

$0.062

$0.030

$0.015

$0.014

DigiKey

USA . 10,935 parts In-Stock

1+ parts

$0.390

100+ parts

$0.195

1k+ parts

$0.111

10k+ parts

$0.097

10,935

$0.390

$0.195

$0.111

$0.097

Flip Electronics (Authorized)

USA . 11,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,980

-

-

-

-

Verical

USA . 10,833 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.015

10k+ parts

$0.014

10,833

-

-

$0.015

$0.014

Chip1Stop

Japan . 10,833 parts In-Stock

1+ parts

-

100+ parts

$0.024

1k+ parts

$0.018

10k+ parts

-

10,833

-

$0.024

$0.018

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,228 parts In-Stock

1+ parts

$0.015

100+ parts

-

1k+ parts

-

10k+ parts

-

2,228

$0.015

-

-

-

Digiode

USA . 1,923 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

-

10k+ parts

-

1,923

$0.059

-

-

-

Flip Electronics

USA . 11,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,980

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 213 parts In-Stock

1+ parts

$0.015

100+ parts

-

1k+ parts

-

10k+ parts

-

213

$0.015

-

-

-

Corphita

USA . 544 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

-

10k+ parts

-

544

$0.056

-

-

-

Component Stockers USA

USA . 34,424 parts In-Stock

1+ parts

$0.060

100+ parts

$0.030

1k+ parts

$0.020

10k+ parts

$0.020

34,424

$0.060

$0.030

$0.020

$0.020

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Kulean Microsystems

USA . 7,624 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,624

-

-

-

-

TANS Electronics

Latvia . 7,382 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,382

-

-

-

-

Problanco Electronics

Mexico . 2,103 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,103

-

-

-

-

SupplyDigital Components

Austria . 1,883 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,883

-

-

-

-

UHIMA Technologies

Türkiye . 765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

765

-

-

-

-

Overview

Unleash the power of innovation with the NHPM120T3G diode by Onsemi. Designed with precision and quality in mind, this versatile rectifier diode offers a wide range of applications for your electronic needs. From efficient energy conversion to reliable circuit protection, this diode ensures optimal performance with its fast reverse recovery time and high repetitive peak reverse voltage. Trust in Onsemi's reputation for excellence and elevate your projects with the NHPM120T3G diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the diode, making it suitable for various environmental conditions.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.025 us

Low reverse recovery time ensures fast switching speed, making it ideal for high-frequency applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for reliable performance in a wide range of operating conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures a secure electrical connection, improving overall product reliability.

Maximum Output Current: 1 A

Capable of handling a high output current of 1 A, making it suitable for applications requiring moderate power handling capabilities.

Maximum Repetitive Peak Reverse Voltage: 200 V

High maximum repetitive peak reverse voltage rating ensures the diode can handle high voltage spikes without breakdown, increasing product reliability.

Technical Specifications

Diodes & Rectifiers NHPM120T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.025 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NHPM120T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2