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NCV97311MW33R2G

Onsemi

NCV97311MW33R2G by Onsemi

NCV97311MW33R2G by Onsemi is a Power Management IC with 32 terminals in a square package. It operates b/w -40 to 125 °C, suitable for automotive applications. With adjustable threshold and support for up to 4 channels, it has a supply voltage range of 4.5-34V, making it ideal for power supply circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 2,470 parts In-Stock

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AZTECH Wire

Italy . 1,074 parts In-Stock

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$17.570

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Perfect Parts

USA . 28,213 parts In-Stock

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Problanco Electronics

Mexico . 7,340 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 4,367 parts In-Stock

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SupplyDigital Components

Austria . 2,807 parts In-Stock

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Microchip USA

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 847 parts In-Stock

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Overview

Unlock the power of your devices with the NCV97311MW33R2G by Onsemi. Designed with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Perfect for a wide range of applications in the automotive industry, this square-shaped chip carrier with 32 terminals delivers exceptional performance in a compact package. Say goodbye to worrying about supply voltage with adjustable thresholds and no lead terminal forms. Trust Onsemi to provide cutting-edge technology that exceeds expectations and brings value to your projects.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and reliable PCB mounting, making installation more convenient.

Package Shape: SQUARE

Square shape helps in optimizing space on the PCB and allows for better placement in tight layouts.

No. of Terminals: 32

Having a higher number of terminals allows for more connectivity options and flexibility in circuit design.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of these package styles ensures efficient heat dissipation and a slim profile, making it suitable for compact designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand demanding environmental conditions.

Minimum Operating Temperature: -40 °C

This wide temperature range ensures functionality in both extreme cold and hot conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and corrosion resistance for long-lasting performance.

Terminal Position: QUAD

Quad terminal position offers increased stability and robustness in the connection.

Maximum Seated Height: 1 mm

Low seated height allows for a compact and sleek overall design.

Width (mm): 5 mm

Narrow width enables efficient use of PCB space and facilitates compact system design.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

Being a power supply support circuit enhances the functionality and reliability of the overall power management system.

Minimum Supply Voltage (Vsup): 4.5 V

Low minimum supply voltage ensures compatibility with a wide range of power sources.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for adequate time for reflow soldering process, ensuring proper connection and reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper solder joint formation for durability.

Length: 5 mm

Compact length contributes to space-saving design and efficient layout on the PCB.

Temperature Grade: AUTOMOTIVE

Automotive-grade ensures reliability and durability in harsh automotive environments.

No. of Channels: 4

Multiple channels provide the capability to manage and control different power sources or loads effectively.

Terminal Form: NO LEAD

No-lead terminal form offers improved mechanical and electrical performance.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for high-density mounting, enabling more functionality in a limited space.

Maximum Supply Voltage (Vsup): 34 V

High maximum supply voltage allows for compatibility with a wide range of power sources.

Adjustable Threshold: YES

Having adjustable threshold adds flexibility in setting up the power management system according to specific requirements.

Technical Specifications

Power Management ICs NCV97311MW33R2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-XQCC-N32

JESD-609 Code:

e3

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

34 V

Minimum Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

5 mm

Trade Compliance

NCV97311MW33R2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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