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NCV97310MW50AR2G

Onsemi

NCV97310MW50AR2G by Onsemi

NCV97310MW50AR2G by Onsemi is a Power Management IC with 32 terminals, operating voltage range of 4.5V to 36V, and adjustable threshold feature. It is designed for automotive applications, with a temperature range from -40 °C to 125°C, making it suitable for various power supply support circuits in vehicles. The IC comes in a square chip carrier package style with surface mount capability and matte tin terminal finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,256 parts In-Stock

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2,256

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Digiode

USA . 1,955 parts In-Stock

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1,955

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 6,370 parts In-Stock

1+ parts

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6,370

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SupplyDigital Components

Austria . 4,376 parts In-Stock

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4,376

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Corphita

USA . 2,347 parts In-Stock

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2,347

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Problanco Electronics

Mexico . 2,089 parts In-Stock

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2,089

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TANS Electronics

Latvia . 744 parts In-Stock

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744

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UHIMA Technologies

Türkiye . 454 parts In-Stock

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454

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Corohmni

South Africa . 435 parts In-Stock

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435

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Overview

Unlock the potential of your power management solutions with the NCV97310MW50AR2G by Onsemi. Manufactured by a trusted industry leader, this Power Management IC offers reliability and efficiency for a wide range of applications. Its compact package shape and surface mount design make it ideal for automotive environments. With adjustable threshold and a wide supply voltage range, this product provides unmatched versatility and performance. Experience superior quality and value with the NCV97310MW50AR2G - the perfect solution for all your power management needs.

Feature Benefit Bullets

Surface Mount: YES

Surface mount packaging allows for easy and efficient assembly onto circuit boards, saving time and reducing labor costs.

Nominal Supply Voltage (Vsup): 5.5 V

The 5.5V supply voltage ensures stable and efficient power delivery to the connected devices without risking overvoltage issues.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this power management IC can withstand harsh operating conditions and maintain reliable performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and conductivity, ensuring secure connections and reducing the risk of electrical issues.

Minimum Supply Voltage (Vsup): 4.5 V

The 4.5V minimum supply voltage allows for flexibility in power input requirements, accommodating a range of different power sources.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this power management IC meets strict industry standards and can reliably operate in challenging automotive environments.

Adjustable Threshold: YES

The adjustable threshold feature allows for customization of voltage levels, providing versatility in power management and optimization for specific applications.

Technical Specifications

Power Management ICs NCV97310MW50AR2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-XQCC-N32

JESD-609 Code:

e3

Length:

5 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

36 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

5.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width (mm):

5 mm

Trade Compliance

NCV97310MW50AR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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