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NCV662SQ50T1

Onsemi

NCV662SQ50T1 by Onsemi

NCV662SQ50T1 by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max dropout voltage of 0.3V. It operates in temperatures ranging from -40 to 150 °C, making it suitable for automotive applications requiring stable voltage regulation in compact spaces.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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AZTECH Wire

Italy . 909 parts In-Stock

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Kulean Microsystems

USA . 7,312 parts In-Stock

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Problanco Electronics

Mexico . 5,282 parts In-Stock

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TANS Electronics

Latvia . 2,538 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 816 parts In-Stock

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UHIMA Technologies

Türkiye . 609 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic designs with the NCV662SQ50T1 by Onsemi, a top-quality fixed positive single output LDO regulator. Manufactured with precision and expertise by Onsemi, this regulator offers customers superior performance, reliability, and efficiency for a wide range of applications. With its compact design, precise voltage regulation, and high tolerance levels, the NCV662SQ50T1 provides excellent value and benefits to customers seeking top-notch power management solutions. Upgrade your projects with Onsemi's innovative technology and unlock new possibilities in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the regulator, ensuring a longer lifespan.

Maximum Dropout Voltage: 1.3 V

This low dropout voltage ensures that the regulator can maintain a stable output voltage even when the input voltage decreases close to the output voltage.

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards, saving space and facilitating automated manufacturing processes.

Operating Temperature (TJ-Max): 150 °C

Can operate effectively at high temperatures, making it suitable for a wide range of industrial and automotive applications.

Technology: CMOS

Provides low power consumption and high efficiency, making the regulator suitable for battery-powered devices and energy-efficient systems.

No. of Terminals: 4

Simple and straightforward connection layout, making it easy to integrate into existing circuit designs.

Nominal Output Voltage: 5 V

A standard and widely used output voltage, making this regulator compatible with a variety of electronic devices and systems.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely cold environments, ensuring reliable performance in harsh conditions.

Regulator Type: FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR

Designed for applications where a stable and precise output voltage is required, such as in sensor networks, communication systems, and automotive electronics.

Maximum Output Current: 1 A

Capable of delivering sufficient current to power a variety of electronic components and devices.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCV662SQ50T1 attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.3 V

Nominal Dropout Voltage-1:

.17 V

Maximum Input Voltage Absolute:

6 V

Maximum Input Voltage:

6 V

Minimum Input Voltage:

5.5 V

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Length:

2 mm

Maximum Line Regulation:

.02 %

Maximum Load Regulation:

.04 %

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

4

Operating Temperature (TJ-Max):

150 Cel

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current-1:

.1 A

Maximum Output Voltage-1:

5.2 V

Minimum Output Voltage-1:

4.8 V

Nominal Output Voltage-1:

5 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOT-343R

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

235

Qualification Status:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.3 mm

Terminal Position:

DUAL

Maximum Voltage Tolerance:

2 %

Width:

1.25 mm

Trade Compliance

NCV662SQ50T1 Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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