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NCV662SQ28T1

Onsemi

NCV662SQ28T1 by Onsemi

NCV662SQ28T1 by Onsemi is a CMOS LDO regulator with 2.8V output voltage, 0.5V dropout voltage, and 0.1A output current. Ideal for automotive applications due to AEC-Q100 screening and small form factor package design. Operating temperature range from -40 °C to 150°C makes it suitable for various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,080 parts In-Stock

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Vyrian

USA . 684 parts In-Stock

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684

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Problanco Electronics

Mexico . 6,943 parts In-Stock

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6,943

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Kulean Microsystems

USA . 3,442 parts In-Stock

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TANS Electronics

Latvia . 2,912 parts In-Stock

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SupplyDigital Components

Austria . 2,600 parts In-Stock

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Corphita

USA . 1,801 parts In-Stock

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UHIMA Technologies

Türkiye . 710 parts In-Stock

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710

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Vigor

Singapore . 310 parts In-Stock

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Corohmni

South Africa . 305 parts In-Stock

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Microchip USA

USA . 107 parts In-Stock

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Overview

Unlock the power of reliable voltage regulation with the NCV662SQ28T1 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch quality and cutting-edge technology in their Fixed Regulators - Positive Single Output LDO category. Ideal for various applications, this product ensures stable performance and efficient power management. Experience the value and benefits of seamless voltage control with the NCV662SQ28T1, offering customers the advantage of superior quality and reliability in a compact package.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability to the product, making it suitable for various applications.

Maximum Dropout Voltage: 1.5 V

Low dropout voltage ensures efficient power conversion and helps in maintaining stable output voltage even when input voltage fluctuates.

Surface Mount: YES

Surface mount capability allows for easier and more convenient installation of the regulator on the PCB, saving space and reducing overall product size.

Operating Temperature (TJ-Max): 150 °C

Wide operating temperature range makes this regulator suitable for use in various environmental conditions without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption and high reliability, making the regulator ideal for battery-powered devices and applications requiring stable voltage output.

Nominal Output Voltage: 2.8 V

Stable output voltage of 2.8V ensures consistent power supply to connected components, reducing the risk of damage due to voltage fluctuations.

Package Style: SMALL OUTLINE, THIN PROFILE

Compact package style with a thin profile allows for space-saving design and easy integration into small form factor devices.

Maximum Output Current: 0.1 A

With a maximum output current of 0.1A, this regulator can efficiently power low to medium power consumption devices, making it suitable for a wide range of applications.

Minimum Input Voltage: 3.8 V

Low minimum input voltage requirement of 3.8V allows the regulator to operate with a wide range of input voltages, enhancing its versatility for different power supply scenarios.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCV662SQ28T1 attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.5 V

Nominal Dropout Voltage-1:

.28 V

Maximum Input Voltage Absolute:

6 V

Maximum Input Voltage:

6 V

Minimum Input Voltage:

3.8 V

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Length:

2 mm

Maximum Line Regulation:

.02 %

Maximum Load Regulation:

.04 %

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

4

Operating Temperature (TJ-Max):

150 Cel

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current-1:

.1 A

Maximum Output Voltage-1:

2.912 V

Minimum Output Voltage-1:

2.688 V

Nominal Output Voltage-1:

2.8 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOT-343R

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

235

Qualification Status:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.3 mm

Terminal Position:

DUAL

Maximum Voltage Tolerance:

2 %

Width:

1.25 mm

Trade Compliance

NCV662SQ28T1 Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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