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NCV662SQ30T1

Onsemi

NCV662SQ30T1 by Onsemi

NCV662SQ30T1 by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3V and max dropout voltage of 0.42V. It operates in temperatures ranging from -40 to 150 °C, making it suitable for automotive applications requiring stable voltage regulation in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,964 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 45 parts In-Stock

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$10.890

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Component Stockers USA

USA . 239 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 8,306 parts In-Stock

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TANS Electronics

Latvia . 7,066 parts In-Stock

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Microchip USA

USA . 6,607 parts In-Stock

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Problanco Electronics

Mexico . 3,601 parts In-Stock

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Kulean Microsystems

USA . 2,228 parts In-Stock

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Corphita

USA . 1,379 parts In-Stock

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UHIMA Technologies

Türkiye . 781 parts In-Stock

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Corohmni

South Africa . 497 parts In-Stock

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Vigor

Singapore . 289 parts In-Stock

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Overview

Discover the exceptional quality and reliability of the NCV662SQ30T1 by Onsemi, a leading manufacturer in the industry. This Fixed Regulator - Positive Single Output LDO offers unparalleled performance and efficiency, making it ideal for a wide range of applications. With precise voltage regulation and superior technology, this product ensures optimal power management for your electronic devices. Trust Onsemi to deliver top-notch solutions that provide value, benefits, and advantages to meet your needs. Elevate your projects with the NCV662SQ30T1 and experience the difference in performance and reliability.

Feature Benefit Bullets

Maximum Dropout Voltage-1: 1.42 V

This low dropout voltage ensures efficient power conversion and minimal power loss, making the product suitable for power-sensitive applications.

Surface Mount: YES

Being surface mountable, the product offers easy installation and space-saving benefits in compact electronic designs.

Operating Temperature (TJ-Max): 150 °C

With a high operating temperature range, the product can withstand harsh environmental conditions and maintain stable performance.

Technology: CMOS

The CMOS technology used in the regulator ensures low power consumption and improved efficiency in power management.

Nominal Output Voltage-1: 3 V

The stable output voltage of 3V makes the product suitable for powering a wide range of electronic devices reliably.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCV662SQ30T1 attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.42 V

Nominal Dropout Voltage-1:

.25 V

Maximum Input Voltage Absolute:

6 V

Maximum Input Voltage:

6 V

Minimum Input Voltage:

4 V

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Length:

2 mm

Maximum Line Regulation:

.02 %

Maximum Load Regulation:

.04 %

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

4

Operating Temperature (TJ-Max):

150 Cel

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current-1:

.1 A

Maximum Output Voltage-1:

3.12 V

Minimum Output Voltage-1:

2.88 V

Nominal Output Voltage-1:

3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOT-343R

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

235

Qualification Status:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.3 mm

Terminal Position:

DUAL

Maximum Voltage Tolerance:

2 %

Width:

1.25 mm

Trade Compliance

NCV662SQ30T1 Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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