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NCV59301DS30R4G

Onsemi

NCV59301DS30R4G by Onsemi

Onsemi's NCV59301DS30R4G is a 3A fixed positive single output LDO regulator with a nominal output voltage of 3V and max dropout voltage of 0.5V. It operates in temperatures ranging from -40 to 125 °C, making it suitable for automotive applications requiring stable voltage regulation in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 4,888 parts In-Stock

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Digiode

USA . 1,824 parts In-Stock

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Bristol Electronics

USA . 718 parts In-Stock

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Dan-Mar Components

USA . 718 parts In-Stock

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Vigor

Singapore . 945 parts In-Stock

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$2.070

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$2.694

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$2.452

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$2.209

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AZTECH Wire

Italy . 312 parts In-Stock

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$9.650

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SupplyDigital Components

Austria . 7,473 parts In-Stock

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Kulean Microsystems

USA . 3,953 parts In-Stock

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Microchip USA

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Corphita

USA . 1,119 parts In-Stock

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UHIMA Technologies

Türkiye . 959 parts In-Stock

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TANS Electronics

Latvia . 689 parts In-Stock

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Corohmni

South Africa . 138 parts In-Stock

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Problanco Electronics

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Overview

Experience the next level of performance with the NCV59301DS30R4G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their products. This fixed regulator is perfect for various applications, providing a stable output voltage and efficient power management. With a small outline package style and high current capability, this LDO regulator offers exceptional value and benefits to customers looking for superior performance. Trust Onsemi to deliver cutting-edge technology and innovation for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the regulator lightweight and durable, ideal for applications where weight and reliability are important.

Maximum Dropout Voltage: 1.5 V

With a low maximum dropout voltage of 1.5V, this regulator is efficient and can provide a stable output voltage even when the input voltage is close to the output voltage.

Surface Mount: YES

Being surface mountable, this regulator can be easily integrated into compact electronic devices, saving space and simplifying the assembly process.

Operating Temperature (TJ-Max): 125 °C

With a high operating temperature of 125 °C, this regulator can withstand harsh environmental conditions and operate reliably in hot temperature environments.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures that this regulator meets the stringent quality and reliability requirements for automotive applications, making it a suitable choice for automotive electronics.

Technology: BIPOLAR

The bipolar technology used in this regulator ensures low noise and high stability in the output voltage, making it ideal for noise-sensitive applications such as audio equipment.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs and facilitates efficient heat dissipation, making this regulator suitable for high-power applications.

Terminal Form: GULL WING

The gull wing terminal form provides reliable electrical connections and ease of soldering, ensuring a secure attachment to the circuit board.

Operating Temperature (TJ-Min): -40 °C

With a low operating temperature of -40 °C, this regulator can withstand cold temperature environments, making it suitable for outdoor and industrial applications.

Nominal Output Voltage: 3 V

The fixed nominal output voltage of 3V provides a stable and consistent power supply for the connected components, ensuring reliable performance of the electronic device.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCV59301DS30R4G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.5 V

Nominal Dropout Voltage-1:

.3 V

Maximum Input Voltage Absolute:

Maximum Input Voltage:

13.5 V

Minimum Input Voltage:

2.24 V

JESD-30 Code:

R-PSSO-G5

JESD-609 Code:

e3

Length:

10.02 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Output Current-1:

3 A

Maximum Output Voltage-1:

3.075 V

Minimum Output Voltage-1:

2.925 V

Nominal Output Voltage-1:

3 V

Package Body Material:

PLASTIC/EPOXY

Package Equivalence Code:

SMSIP5H,.6,67TB

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

4.826 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

BIPOLAR

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.702 mm

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

Width:

9.1945 mm

Trade Compliance

NCV59301DS30R4G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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