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NCV502SN33T1G

Onsemi

NCV502SN33T1G by Onsemi

NCV502SN33T1G by Onsemi is a CMOS LDO regulator with 3.3V output voltage, 0.08A output current, and 1.2V dropout voltage. It is ideal for automotive applications due to AEC-Q100 screening and can operate in temperatures ranging from -45 °C to 125°C.

Median Price

$0.260

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 18,000 parts In-Stock

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Vyrian

USA . 2,488 parts In-Stock

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$0.260

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Flip Electronics

USA . 18,000 parts In-Stock

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18,000

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ComSIT Distribution GmbH

Germany . 2,045 parts In-Stock

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Digiode

USA . 268 parts In-Stock

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268

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Vigor

Singapore . 680 parts In-Stock

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$0.240

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680

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Corohmni

South Africa . 383 parts In-Stock

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383

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TANS Electronics

Latvia . 8,005 parts In-Stock

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Problanco Electronics

Mexico . 6,922 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,682 parts In-Stock

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Corphita

USA . 2,073 parts In-Stock

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SupplyDigital Components

Austria . 875 parts In-Stock

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UHIMA Technologies

Türkiye . 639 parts In-Stock

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Microchip USA

USA . 475 parts In-Stock

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Overview

Enhance your electronic devices with the NCV502SN33T1G from Onsemi, a top-quality fixed regulator that ensures stable voltage output for optimal performance. Manufactured by Onsemi, a trusted brand known for its cutting-edge technology and reliability, this LDO regulator is perfect for a wide range of applications. With its compact design and efficient operation, this product offers customers exceptional value and benefits, giving you peace of mind knowing your electronics are in good hands. Upgrade your devices today with the NCV502SN33T1G and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package makes the product lightweight and durable, ideal for portable electronic devices.

Maximum Dropout Voltage-1: 1.2 V

With a low maximum dropout voltage, this regulator can maintain a stable output voltage even when the input voltage fluctuates, ensuring reliable performance.

Terminal Form: GULL WING

The gull wing terminal form allows for easy surface mounting, making the installation process convenient and efficient.

Nominal Output Voltage-1: 3.3 V

The nominal output voltage of 3.3V ensures compatibility with a wide range of electronic devices, making this regulator a versatile choice.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this regulator can withstand harsh environmental conditions and maintain stable performance.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCV502SN33T1G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

1.2 V

Nominal Dropout Voltage-1:

.85 V

Maximum Input Voltage Absolute:

Maximum Input Voltage:

12 V

Minimum Input Voltage:

4.3 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Maximum Output Current-1:

.08 A

Maximum Output Voltage-1:

3.399 V

Minimum Output Voltage-1:

3.201 V

Nominal Output Voltage-1:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2 %

Width:

1.5 mm

Trade Compliance

NCV502SN33T1G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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