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NCV551SN50T1

Onsemi

NCV551SN50T1 by Onsemi

Onsemi's NCV551SN50T1 is a CMOS LDO regulator with 5V output voltage, 0.15A output current, and 0.15V dropout voltage. Ideal for automotive applications due to AEC-Q100 screening, it operates b/w -40 °C to 150°C temperature range in a small outline package.

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Vyrian

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AZTECH Wire

Italy . 813 parts In-Stock

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RC Electronics

USA . 65,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,777 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Elevate your electronic designs to the next level with the NCV551SN50T1 by Onsemi. Crafted with precision and reliability in mind, this fixed positive single output LDO regulator offers superior performance and efficiency for a wide range of applications. With a small outline, thin profile, and shrink pitch package style, this regulator is ideal for space-constrained projects where quality and consistency are paramount. Experience the value and benefits of Onsemi's cutting-edge technology, delivering a stable output voltage of 5V with minimal dropout voltage and exceptional load regulation. Trust Onsemi to power up your innovations with the NCV551SN50T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the regulator, making it reliable for long-term use.

Maximum Dropout Voltage-1: 0.15 V

Low dropout voltage ensures efficient power conversion with minimal energy loss, resulting in better overall performance.

Surface Mount: YES

Enables easy and secure mounting on PCBs, saving space and simplifying assembly processes.

Operating Temperature (TJ-Max): 150 °C

Wide operating temperature range allows the regulator to function effectively in various environmental conditions.

Screening Level: AEC-Q100

Compliance with AEC-Q100 automotive quality standards ensures high reliability and performance in automotive applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the regulator suitable for sensitive electronic devices.

Package Shape: RECTANGULAR

Rectangular shape offers efficient use of space on the PCB, allowing for compact and space-saving designs.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections, enhancing the overall durability and stability of the regulator.

Packing Method: TR

TR packing method is suitable for automated assembly processes, making it convenient for mass production.

Minimum Output Voltage-1: 4.85 V

Stable minimum output voltage ensures consistent power supply, preventing voltage drops and fluctuations in the connected devices.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCV551SN50T1 attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.15 V

Nominal Dropout Voltage-1:

.04 V

Maximum Input Voltage Absolute:

Maximum Input Voltage:

12 V

Minimum Input Voltage:

6 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

Maximum Line Regulation:

.03 %

Maximum Load Regulation:

.065 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

150 Cel

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current-1:

.15 A

Maximum Output Voltage-1:

5.15 V

Minimum Output Voltage-1:

4.85 V

Nominal Output Voltage-1:

5 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

235

Qualification Status:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

3 %

Width:

1.5 mm

Trade Compliance

NCV551SN50T1 Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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