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NCV33274ADR2

Onsemi

NCV33274ADR2 by Onsemi

NCV33274ADR2 by Onsemi is an operational amplifier with 4 functions, featuring a max input offset voltage of 3500uV and a nominal common mode reject ratio of 100dB. With a package style of small outline and AEC-Q100 screening level, it is ideal for automotive applications requiring precise signal amplification in compact spaces.

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3

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1k+

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Chip Stock

USA . 11,500 parts In-Stock

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AZTECH Wire

Italy . 170 parts In-Stock

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$20.690

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Component Stockers USA

USA . 731 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 6,711 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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TANS Electronics

Latvia . 2,562 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 90 parts In-Stock

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Overview

Enhance your automotive applications with the NCV33274ADR2 operational amplifier from Onsemi. With a high common mode rejection ratio and low bias current, this quality product offers superior performance and reliability. Designed for automotive environments, this op amp is perfect for a wide range of precision signal processing applications. Trust Onsemi's expertise in semiconductor manufacturing to deliver exceptional value and benefits to meet your engineering needs. Upgrade your designs with the NCV33274ADR2 and experience unparalleled quality and performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the operational amplifier, ensuring long-lasting performance.

Maximum Input Offset Voltage: 3500 uV

Low input offset voltage results in accurate signal processing and reduced error in the output signal.

Maximum Average Bias Current (IIB): 0.8 uA

Low bias current helps in minimizing power consumption and improving efficiency of the operational amplifier.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Nominal Common Mode Reject Ratio: 100 dB

High common mode reject ratio ensures that the operational amplifier can effectively filter out common mode noise, resulting in a cleaner output signal.

Nominal Supply Voltage / Vsup (V): 15

Stable supply voltage of 15V allows for reliable operation of the operational amplifier without voltage fluctuations affecting performance.

Minimum Slew Rate: 8 V/us

Fast slew rate enables the operational amplifier to respond quickly to changes in input signals, making it suitable for applications requiring rapid signal processing.

Nominal Unity Gain Bandwidth: 5500 kHz

High unity gain bandwidth indicates the operational amplifier's ability to amplify signals accurately and efficiently across a wide range of frequencies.

Technical Specifications

Operational Amplifiers (Op Amps) NCV33274ADR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±18/3/36 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

3500 uV

Minimum Voltage Gain:

19950

Minimum Slew Rate:

8 V/us

Nominal Slew Rate:

10 V/us

Peak Bias Current:

800 nA

Maximum Bias Current (IIB) @25 °C:

650 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

12 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

NCV33274ADR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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