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NCV33204DTBR2

Onsemi

NCV33204DTBR2 by Onsemi

NCV33204DTBR2 by Onsemi is a 4-function operational amplifier with a max input offset voltage of 17000 uV and a min slew rate of 0.5 V/us. It is designed for applications requiring high common mode rejection ratio, such as automotive electronics due to its AEC-Q100 screening level and military-grade temperature range.

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1k+

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Chip Stock

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AZTECH Wire

Italy . 976 parts In-Stock

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Kepictronics

USA . 27,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,505 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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TANS Electronics

Latvia . 4,485 parts In-Stock

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Problanco Electronics

Mexico . 3,843 parts In-Stock

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Microchip USA

USA . 3,313 parts In-Stock

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Corphita

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Vigor

Singapore . 490 parts In-Stock

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UHIMA Technologies

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Overview

Unlock the full potential of your electronic designs with the NCV33204DTBR2 by Onsemi. This high-quality operational amplifier offers unparalleled performance and reliability, making it the perfect choice for a wide range of applications. With Onsemi's reputation for excellence in manufacturing and the advanced features of this Op Amp, you can trust that your projects will benefit from superior precision and efficiency. Experience the value and advantages that the NCV33204DTBR2 brings to your designs, and elevate your electronic creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ideal for applications where weight and durability are important factors.

Maximum Input Offset Voltage: 17000 uV

The low maximum input offset voltage ensures accurate and precise signal processing, making the product suitable for high-precision applications.

Nominal Common Mode Reject Ratio: 90 dB

With a high common mode reject ratio, the product can effectively suppress common mode noise and interference, ensuring clean and reliable signal output.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V makes the product compatible with standard power sources, simplifying integration into existing systems.

Minimum Voltage Gain: 25000

The high minimum voltage gain of 25000 ensures amplification of weak signals without introducing significant distortion, making the product suitable for amplification applications.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture of the product provides excellent linearity, stability, and bandwidth, making it suitable for high-performance amplifier designs.

Technical Specifications

Operational Amplifiers (Op Amps) NCV33204DTBR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

17000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.5 V/us

Nominal Slew Rate:

1 V/us

Peak Bias Current:

500 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

13 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

4.5 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

NCV33204DTBR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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