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NCV33204DR2

Onsemi

NCV33204DR2 by Onsemi

NCV33204DR2 by Onsemi is a 4-function operational amplifier with a max input offset voltage of 17000 uV, ideal for military applications. Featuring a nominal voltage of 5V and a min slew rate of 0.5 V/us, this op amp offers high performance in a small outline package suitable for surface mount technology. With AEC-Q100 screening level and operating temperature range from -55 to 125 °C, it ensures reliable operation in harsh environments.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 10,416 parts In-Stock

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Digiode

USA . 619 parts In-Stock

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AZTECH Wire

Italy . 1,009 parts In-Stock

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$16.260

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Kulean Microsystems

USA . 7,435 parts In-Stock

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TANS Electronics

Latvia . 5,955 parts In-Stock

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Problanco Electronics

Mexico . 4,495 parts In-Stock

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SupplyDigital Components

Austria . 1,355 parts In-Stock

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UHIMA Technologies

Türkiye . 715 parts In-Stock

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Microchip USA

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Corphita

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Corohmni

South Africa . 90 parts In-Stock

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Overview

Unleash the power of precision with Onsemi's NCV33204DR2 operational amplifier. Crafted with cutting-edge technology, this amplifier offers unparalleled performance and reliability for a wide range of applications. From automotive to industrial uses, this versatile component delivers superior quality and efficiency, making it the ideal choice for demanding projects. Elevate your designs with the NCV33204DR2 and experience the difference that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Maximum Input Offset Voltage: 17000 uV

Low offset voltage ensures accurate signal processing, making this Op Amp suitable for precision applications.

No. of Functions: 4

Having multiple functions in one component increases versatility and efficiency in circuit design.

Nominal Common Mode Reject Ratio: 90 dB

High common-mode rejection ratio indicates good rejection of noise and interference from the input signal.

Maximum Supply Voltage Limit: 13 V

Allows for a wide range of supply voltages, making this Op Amp versatile for different power requirements.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this Op Amp can withstand harsh environmental conditions.

Minimum Voltage Gain: 25000

High voltage gain capability ensures amplification of weak signals with minimal distortion.

Nominal Unity Gain Bandwidth: 2200 kHz

Higher unity gain bandwidth indicates faster response time, suitable for high-frequency applications.

Technical Specifications

Operational Amplifiers (Op Amps) NCV33204DR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

17000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.5 V/us

Nominal Slew Rate:

1 V/us

Peak Bias Current:

500 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

13 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

4.5 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

NCV33204DR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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