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NCV33174DTBR2G

Onsemi

NCV33174DTBR2G by Onsemi

NCV33174DTBR2G by Onsemi is a 4-function operational amplifier with a max input offset voltage of 6500uV. It operates in the temperature range of -40 to 125 °C and has a nominal unity gain bandwidth of 1800 kHz. Ideal for automotive applications due to its small outline, thin profile package style.

Median Price

$0.818

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 4,445 parts In-Stock

1+ parts

$1.020

100+ parts

$0.587

1k+ parts

$0.508

10k+ parts

$0.470

4,445

$1.020

$0.587

$0.508

$0.470

Mouser Electronics

USA . 5,249 parts In-Stock

1+ parts

$1.790

100+ parts

$0.841

1k+ parts

$0.583

10k+ parts

$0.501

5,249

$1.790

$0.841

$0.583

$0.501

Rochester

USA . 1,172 parts In-Stock

1+ parts

-

100+ parts

$0.615

1k+ parts

$0.510

10k+ parts

$0.455

1,172

-

$0.615

$0.510

$0.455

Verical

USA . 1,172 parts In-Stock

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-

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$0.608

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$0.542

1,172

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$0.608

$0.542

Distributors (In-Stock)

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Digiode

USA . 1,074 parts In-Stock

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$0.455

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1,074

$0.455

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Flip Electronics

USA . 10,000 parts In-Stock

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Vyrian

USA . 1,414 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Ampacity Inc.

Singapore . 1,308 parts In-Stock

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$0.407

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$0.407

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Corphita

USA . 2,490 parts In-Stock

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$0.431

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2,490

$0.431

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Corohmni

South Africa . 434 parts In-Stock

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$0.479

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$0.479

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TANS Electronics

Latvia . 8,179 parts In-Stock

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Problanco Electronics

Mexico . 7,009 parts In-Stock

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SupplyDigital Components

Austria . 6,225 parts In-Stock

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Continental Prestige Electronics

USA . 2,279 parts In-Stock

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Argo Parts USA

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UHIMA Technologies

Türkiye . 408 parts In-Stock

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Kulean Microsystems

USA . 92 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Unleash the power of precision with the NCV33174DTBR2G operational amplifier by Onsemi. Designed for automotive applications, this versatile component offers superior performance and reliability. With a unity gain bandwidth of 1800 kHz and a common mode reject ratio of 90 dB, this op amp delivers unparalleled accuracy and efficiency. Trust in Onsemi's reputation for quality and innovation, and experience the difference with the NCV33174DTBR2G. Elevate your projects to the next level with this cutting-edge solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 6500 uV

Low input offset voltage helps in maintaining accurate output signals and minimizes errors in the circuit.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio indicates that the amplifier can effectively cancel out noise and interference from the input signal.

Nominal Supply Voltage / Vsup (V): 15

A stable supply voltage of 15V allows for consistent performance of the operational amplifier within the specified operating conditions.

Nominal Unity Gain Bandwidth: 1800 kHz

A high unity gain bandwidth ensures the operational amplifier can handle high-frequency signals with minimal distortion.

Technology: BIPOLAR

Bipolar technology offers high gain and precise output control, making this operational amplifier suitable for applications requiring accuracy and stability.

Technical Specifications

Operational Amplifiers (Op Amps) NCV33174DTBR2G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Total Functions:

4

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

1.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

6500 uV

Nominal Slew Rate:

2.1 V/us

Peak Bias Current:

200 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

NCV33174DTBR2G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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