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NCV33152DR2

Onsemi

NCV33152DR2 by Onsemi

NCV33152DR2 by Onsemi is a MOSFET gate driver with 2 functions, operating at supply voltages b/w 6.5V to 18V. This automotive-grade driver has a turn-on/off time of 0.12us and peak output current limit of 1.5A, suitable for high side driving applications in the temperature range of -40 °C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,749 parts In-Stock

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Digiode

USA . 2,229 parts In-Stock

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AZTECH Wire

Italy . 265 parts In-Stock

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$17.730

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265

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QUARKTWIN TECHNOLOGY LTD

USA . 29,890 parts In-Stock

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Kulean Microsystems

USA . 7,156 parts In-Stock

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SupplyDigital Components

Austria . 6,278 parts In-Stock

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Problanco Electronics

Mexico . 3,762 parts In-Stock

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Microchip USA

USA . 3,090 parts In-Stock

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TANS Electronics

Latvia . 1,925 parts In-Stock

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Corphita

USA . 1,800 parts In-Stock

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Corohmni

South Africa . 209 parts In-Stock

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UHIMA Technologies

Türkiye . 200 parts In-Stock

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Vigor

Singapore . 146 parts In-Stock

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Overview

Enhance the performance of your automotive applications with the NCV33152DR2 MOSFET Gate Driver by Onsemi. Designed with top-notch quality and reliability, this driver delivers exceptional value and benefits to customers. With a wide operating temperature range and high output peak current limit, this product ensures optimal functionality in challenging environments. Trust Onsemi's expertise in semiconductor technology to provide you with cutting-edge solutions for your high-side driver needs. Experience the advantages of the NCV33152DR2 and elevate the performance of your automotive systems today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, suitable for automotive applications.

Surface Mount: YES

Surface mount design allows for easy installation on PCBs, saving space and simplifying assembly.

Maximum Supply Voltage: 18 V

Support for a high maximum supply voltage allows for flexibility in different power supply configurations.

No. of Functions: 2

With two functions in one device, it offers cost-saving and space-saving benefits.

Package Shape: RECTANGULAR

Rectangular package shape is easy to handle and fits well on PCB layouts.

Power Supplies (V): 12

Suitable for applications requiring a 12V power supply, commonly found in automotive systems.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability in harsh operating conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in cold environments.

Nominal Output Peak Current Limit: 1.5 A

With a high peak output current limit, it can drive MOSFETs with higher power requirements.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The interface IC type ensures efficient driving of MOSFETs for optimal performance.

Technical Specifications

MOSFET Gate Drivers NCV33152DR2 attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

12

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

6.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.12 us

Turn-on Time:

.12 us

Width:

3.9 mm

Trade Compliance

NCV33152DR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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