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NCV33152DR2G

Onsemi

NCV33152DR2G by Onsemi

NCV33152DR2G by Onsemi is a MOSFET gate driver with 2 functions, operating at supply voltages b/w 6.5V to 18V. It has a turn-on and turn-off time of 0.12us, making it suitable for automotive applications requiring high side drivers with a nominal output peak current limit of 1.5A.

Median Price

$1.420

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,754 parts In-Stock

1+ parts

$1.420

100+ parts

$0.833

1k+ parts

$0.682

10k+ parts

$0.667

4,754

$1.420

$0.833

$0.682

$0.667

DigiKey

USA . 3,948 parts In-Stock

1+ parts

$1.420

100+ parts

$0.833

1k+ parts

$0.727

10k+ parts

$0.676

3,948

$1.420

$0.833

$0.727

$0.676

Chip1Stop

Japan . 522 parts In-Stock

1+ parts

$4.620

100+ parts

$1.940

1k+ parts

$1.450

10k+ parts

-

522

$4.620

$1.940

$1.450

-

Verical

USA . 17,500 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.714

17,500

-

-

-

$0.714

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.942

100+ parts

-

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700

$0.942

-

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Digiode

USA . 1,984 parts In-Stock

1+ parts

$1.416

100+ parts

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1,984

$1.416

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ComSIT Distribution GmbH

Germany . 10,285 parts In-Stock

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10,285

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Flip Electronics

USA . 8,400 parts In-Stock

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8,400

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Vyrian

USA . 4,915 parts In-Stock

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4,915

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Bristol Electronics

USA . 2,803 parts In-Stock

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2,803

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Speed Components Ltd

Israel . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 4,858 parts In-Stock

1+ parts

$0.510

100+ parts

$0.497

1k+ parts

$0.495

10k+ parts

-

4,858

$0.510

$0.497

$0.495

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Ampacity Inc.

Singapore . 4,774 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

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4,774

$0.510

-

-

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Corohmni

South Africa . 331 parts In-Stock

1+ parts

$0.603

100+ parts

-

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331

$0.603

-

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Vigor

Singapore . 406 parts In-Stock

1+ parts

$0.700

100+ parts

-

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406

$0.700

-

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Argo Parts USA

USA . 4,598 parts In-Stock

1+ parts

$0.942

100+ parts

-

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4,598

$0.942

-

-

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Continental Prestige Electronics

USA . 2,509 parts In-Stock

1+ parts

$0.942

100+ parts

-

1k+ parts

-

10k+ parts

$0.924

2,509

$0.942

-

-

$0.924

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.942

100+ parts

-

1k+ parts

-

10k+ parts

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1,000

$0.942

-

-

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Corphita

USA . 1,010 parts In-Stock

1+ parts

$1.341

100+ parts

-

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-

10k+ parts

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1,010

$1.341

-

-

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Component Stockers USA

USA . 20,526 parts In-Stock

1+ parts

$1.440

100+ parts

$0.970

1k+ parts

$0.660

10k+ parts

$0.600

20,526

$1.440

$0.970

$0.660

$0.600

Benley Electronics

USA . 4 parts In-Stock

1+ parts

$2.000

100+ parts

-

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4

$2.000

-

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Aztec Data Supply Inc.

USA . 288 parts In-Stock

1+ parts

$7.750

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288

$7.750

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QUARKTWIN TECHNOLOGY LTD

USA . 15,448 parts In-Stock

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Kepictronics

USA . 10,000 parts In-Stock

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Perfect Parts

USA . 8,994 parts In-Stock

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iodParts Technologies Inc.

India . 7,500 parts In-Stock

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7,500

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TANS Electronics

Latvia . 7,313 parts In-Stock

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7,313

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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SupplyDigital Components

Austria . 6,979 parts In-Stock

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6,979

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Kulean Microsystems

USA . 6,110 parts In-Stock

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Microchip USA

USA . 5,771 parts In-Stock

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5,771

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A-Z Elektronik GmbH

Germany . 5,313 parts In-Stock

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5,313

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Problanco Electronics

Mexico . 4,375 parts In-Stock

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Metaverse IC Inc.

Canada . 4,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 2,225 parts In-Stock

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Assy Fe

Spain . 2,042 parts In-Stock

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Futuretech Components

Singapore . 675 parts In-Stock

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675

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UHIMA Technologies

Türkiye . 589 parts In-Stock

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589

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GreenTree Electronics

Israel . 522 parts In-Stock

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522

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Overview

Enhance the performance of your automotive applications with the NCV33152DR2G MOSFET Gate Driver by Onsemi. Manufactured with top-quality materials and designed to meet AEC-Q100 standards, this compact and reliable driver offers a wide operating temperature range and high-side driver capabilities. With fast turn-on and turn-off times, precise output current limits, and a small outline package style, this driver provides exceptional value and efficiency for your projects. Upgrade your designs today with the NCV33152DR2G and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the internal components, ensuring durability and reliability.

Surface Mount: YES

Surface mount design allows for easy and convenient placement on circuit boards, saving space and simplifying assembly.

Maximum Supply Voltage: 18 V

Supports a wide range of supply voltages, making it versatile for different applications.

No. of Functions: 2

Having multiple functions in a single device reduces the need for additional components, saving cost and board space.

Screening Level: AEC-Q100

AEC-Q100 qualified for automotive applications, ensuring high reliability and quality standards for harsh environments.

Maximum Operating Temperature: 125 °C

Can operate effectively at high temperatures, suitable for automotive and industrial applications.

Width: 3.9 mm

Compact width allows for easy integration into tight spaces and small PCB designs.

Technology: BIPOLAR

Bipolar technology offers fast switching speeds and high current capability, ideal for MOSFET gate driving applications.

Nominal Output Peak Current Limit: 1.5 A

High peak output current limit enables driving of high-power MOSFETs, ensuring efficient and reliable operation.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Buffer or inverter-based design provides flexibility in driving different types of MOSFETs, offering compatibility with a wide range of applications.

Technical Specifications

MOSFET Gate Drivers NCV33152DR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

6.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.12 us

Turn-on Time:

.12 us

Width:

3.9 mm

Trade Compliance

NCV33152DR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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