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NCP694H33HT1G

Onsemi

NCP694H33HT1G by Onsemi

NCP694H33HT1G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.3A. It operates in temperatures ranging from -40 to 85°C, making it suitable for various applications requiring stable voltage regulation in compact designs. The package style is small outline with gull wing terminals, ideal for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,348 parts In-Stock

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Digiode

USA . 1,843 parts In-Stock

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Chip Stock

USA . 688 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Semtec, LLC

USA . 5 parts In-Stock

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$4.508

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$4.283

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$4.283

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300

$4.508

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$4.283

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Aztec Data Supply Inc.

USA . 344 parts In-Stock

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$7.400

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Semicontronic

India . 1,584 parts In-Stock

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$10.500

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$10.238

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$10.185

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$10.500

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AZTECH Wire

Italy . 700 parts In-Stock

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$11.436

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Ampacity Inc.

Singapore . 1,129 parts In-Stock

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$17.500

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Perfect Parts

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TANS Electronics

Latvia . 8,163 parts In-Stock

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Lixinc

USA . 4,781 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 2,665 parts In-Stock

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Corphita

USA . 2,379 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 564 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Microchip USA

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Vigor

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Corohmni

South Africa . 103 parts In-Stock

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Bastille Electronics

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Overview

Discover the superior quality of the NCP694H33HT1G by Onsemi, a leading manufacturer in the industry. This Fixed Regulator - Positive Single Output LDO offers reliable performance and precise voltage regulation for various applications. With a compact design and high efficiency, this product ensures optimal power management without compromising on space. Trust in Onsemi's expertise to deliver a dependable solution that provides value, benefits, and advantages to meet your needs. Elevate your projects with the NCP694H33HT1G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the product.

Maximum Dropout Voltage: 1.1 V

Low dropout voltage ensures efficient power conversion.

Surface Mount: YES

Ease of installation on PCBs.

Operating Temperature (TJ-Max): 85 °C

Wide operating temperature range for versatile applications.

Technology: CMOS

CMOS technology provides low power consumption.

Package Shape: RECTANGULAR

Space-efficient design for compact circuits.

Operating Temperature (TJ-Min): -40 °C

Can withstand low temperature environments.

Minimum Output Voltage: 3.234 V

Stable output voltage for consistent performance.

Maximum Voltage Tolerance: 2 %

Precise voltage regulation for reliable operation.

Nominal Output Voltage: 3.3 V

Standard voltage output suitable for various applications.

No. of Terminals: 5

Simplified connection setup.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained PCB layouts.

Adjustability: FIXED

Fixed output voltage eliminates the need for adjustment.

Maximum Output Current: 0.3 A

Sufficient current output for powering components.

Maximum Input Voltage Absolute: 6.5 V

Allows for a wide input voltage range for flexibility.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP694H33HT1G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.1 V

Nominal Dropout Voltage-1:

.18 V

Maximum Input Voltage Absolute:

Maximum Input Voltage:

6 V

Minimum Input Voltage:

1.4 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

4.5 mm

Maximum Line Regulation:

.01122 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

85 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current-1:

.3 A

Maximum Output Voltage-1:

3.366 V

Minimum Output Voltage-1:

3.234 V

Nominal Output Voltage-1:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL6,.1,60

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2 %

Width:

2.5 mm

Trade Compliance

NCP694H33HT1G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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