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NCP3155BDR2G

Onsemi

NCP3155BDR2G by Onsemi

NCP3155BDR2G by Onsemi is a voltage-mode switching regulator with 3A output current, operating at -40 to 125 °C. Ideal for automotive applications, it supports input voltages from 4.7V to 24V and has a max switching frequency of 1180kHz. The compact package style (SOP-8) makes it suitable for space-constrained designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,610 parts In-Stock

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Digiode

USA . 1,767 parts In-Stock

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Cogito LLC

Ukraine . 20 parts In-Stock

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AZTECH Wire

Italy . 1,137 parts In-Stock

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$16.060

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SupplyDigital Components

Austria . 8,067 parts In-Stock

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TANS Electronics

Latvia . 6,366 parts In-Stock

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Kulean Microsystems

USA . 3,617 parts In-Stock

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Corphita

USA . 763 parts In-Stock

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Futuretech Components

Singapore . 690 parts In-Stock

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UHIMA Technologies

Türkiye . 659 parts In-Stock

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Corohmni

South Africa . 338 parts In-Stock

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Microchip USA

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Vigor

Singapore . 260 parts In-Stock

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Problanco Electronics

Mexico . 108 parts In-Stock

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Overview

Enhance your power management solutions with the NCP3155BDR2G by Onsemi! Designed for efficiency and reliability, this switching regulator from a trusted manufacturer offers exceptional performance in a compact package. Ideal for a wide range of applications, this voltage-mode control technique allows for precise regulation, maximizing output current up to 3A. Whether you're working on automotive projects or industrial applications, the NCP3155BDR2G provides the value, benefits, and advantages you need to bring your designs to life. Experience seamless operation and high-quality results with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and cost-effective solution for the product.

Surface Mount: YES

Enables easy and quick installation on PCBs, saving time and effort during assembly.

Nominal Input Voltage: 12 V

Ideal for applications where a stable 12V input is required for efficient performance.

Maximum Output Current: 3 A

Capable of delivering sufficient power for various electronic components and devices.

Maximum Switching Frequency: 1180 kHz

Ensures fast response times and high efficiency in regulating voltage levels.

Temperature Grade: AUTOMOTIVE

Designed to withstand automotive temperature ranges, making it suitable for automotive applications.

Technical Specifications

Switching Regulators & Controllers NCP3155BDR2G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

VOLTAGE-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

24 V

Minimum Input Voltage:

4.7 V

Nominal Input Voltage:

12 V

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

YES

Switcher Config:

BUCK

Maximum Switching Frequency:

1180 kHz

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

NCP3155BDR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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