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NCP1402SN50T1G

Onsemi

NCP1402SN50T1G by Onsemi

NCP1402SN50T1G by Onsemi is a small outline switching regulator with 5 terminals. It operates b/w -40 to 85°C, suitable for industrial applications. Features include voltage-mode control, boost configuration, and pulse frequency modulation technique.

Median Price

$0.328

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Nova Conductors

Japan . 650 parts In-Stock

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$0.328

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Semtec, LLC

USA . 35,359 parts In-Stock

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Electronics Depot

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Netsource Technology, Inc.

USA . 2,789 parts In-Stock

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Vyrian

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Digiode

USA . 1,592 parts In-Stock

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ABC Electronics Ltd.

UK . 300 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 4,812 parts In-Stock

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$0.294

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$0.288

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Argo Parts USA

USA . 2,840 parts In-Stock

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$0.294

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$0.285

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Corohmni

South Africa . 267 parts In-Stock

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$0.321

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267

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Netroflash

USA . 1,000 parts In-Stock

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$0.328

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$0.312

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$0.305

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Semicontronic

India . 875 parts In-Stock

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$2.500

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$2.438

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$2.425

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875

$2.500

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Ampacity Inc.

Singapore . 1,295 parts In-Stock

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$3.500

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Aztec Data Supply Inc.

USA . 3,524 parts In-Stock

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$7.200

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AZTECH Wire

Italy . 236 parts In-Stock

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$16.149

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$26.312

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$23.944

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$21.576

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Perfect Parts

USA . 360,283 parts In-Stock

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Kepictronics

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S.R.D Solutions

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TANS Electronics

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Authorized Procurement Solutions

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Problanco Electronics

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Lixinc

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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SupplyDigital Components

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UHIMA Technologies

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Corphita

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Microchip USA

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Kulean Microsystems

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Vigor

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Overview

Discover the NCP1402SN50T1G by Onsemi, a high-quality switching regulator & controller designed for various industrial applications. Onsemi, a reputable manufacturer, ensures reliability and performance in every product. This small outline, thin profile package offers customers a space-saving solution with a wide operating temperature range. With a boost switcher configuration and pulse frequency modulation control technique, this product provides efficient voltage regulation from as low as 0.95V up to 6V input voltage, making it ideal for powering your devices. Upgrade your projects with the NCP1402SN50T1G and enjoy the benefits of advanced technology and reliable performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and reliability to the product.

Surface Mount: YES

Being surface mountable allows for easy integration into circuit boards, making it suitable for compact designs.

Control Mode: VOLTAGE-MODE

Voltage-mode control offers precise regulation of output voltage, ensuring stable performance.

Nominal Input Voltage: 6 V

With a nominal input voltage of 6V, this product is suitable for various applications requiring a regulated power supply.

Maximum Output Current: 0.4 A

The high maximum output current of 0.4A enables the product to power multiple components or devices efficiently.

Technology: CMOS

CMOS technology ensures low power consumption, making the product energy-efficient and suitable for battery-powered applications.

Control Technique: PULSE FREQUENCY MODULATION

Pulse frequency modulation control technique allows for accurate voltage regulation and high efficiency in converting input power to output power.

Switcher Config: BOOST

Boost switcher configuration is ideal for applications requiring higher output voltage than the input voltage, making this product versatile in various power supply designs.

Technical Specifications

Switching Regulators & Controllers NCP1402SN50T1G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

VOLTAGE-MODE

Control Technique:

PULSE FREQUENCY MODULATION

Maximum Input Voltage:

6 V

Minimum Input Voltage:

.95 V

Nominal Input Voltage:

6 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.4 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

YES

Switcher Config:

BOOST

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP1402SN50T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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