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NCP1250ASN100T1G

Onsemi

NCP1250ASN100T1G by Onsemi

NCP1250ASN100T1G by Onsemi is a current-mode switching controller with 6 terminals, operating b/w -40 to 125 °C. It has a max input voltage of 28 V and peak reflow temperature of 260 °C. Ideal for automotive applications due to its small outline and pulse width modulation control technique.

Median Price

$2.450

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,180 parts In-Stock

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$2.450

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$0.609

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$0.397

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1,180

$2.450

$0.609

$0.397

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Distributors (In-Stock)

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Digiode

USA . 2,373 parts In-Stock

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$2.328

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2,373

$2.328

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Vyrian

USA . 8,985 parts In-Stock

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Bristol Electronics

USA . 5,458 parts In-Stock

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$0.352

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$0.263

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$0.244

5,458

-

$0.352

$0.263

$0.244

Dan-Mar Components

USA . 5,458 parts In-Stock

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Flip Electronics

USA . 1,200 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 100 parts In-Stock

1+ parts

$2.205

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100

$2.205

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Corohmni

South Africa . 493 parts In-Stock

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$2.450

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493

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AZTECH Wire

Italy . 350 parts In-Stock

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$22.080

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350

$22.080

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Advanced Electronics

New Zealand . 29 parts In-Stock

1+ parts

$25.589

100+ parts

$23.286

1k+ parts

$20.983

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29

$25.589

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$20.983

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Perfect Parts

USA . 7,661 parts In-Stock

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SupplyDigital Components

Austria . 5,367 parts In-Stock

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Problanco Electronics

Mexico . 4,864 parts In-Stock

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TANS Electronics

Latvia . 1,362 parts In-Stock

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Kulean Microsystems

USA . 1,085 parts In-Stock

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Vigor

Singapore . 936 parts In-Stock

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UHIMA Technologies

Türkiye . 423 parts In-Stock

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Microchip USA

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Kepictronics

USA . 104 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the NCP1250ASN100T1G by Onsemi. Built to the highest standards of quality and reliability, this switching regulator offers unparalleled efficiency and precision. From automotive applications to industrial systems, this compact and versatile component delivers outstanding performance in a wide range of settings. Trust Onsemi's expertise and experience to take your projects to the next level with the NCP1250ASN100T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the switching regulator, ensuring a longer lifespan.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving space and improving overall design flexibility.

Nominal Input Voltage: 12 V

Ideal input voltage for various applications, providing a stable power source for the switching regulator to operate efficiently.

Maximum Switching Frequency: 108 kHz

High switching frequency allows for fast response times and efficient power conversion, making the switching regulator a reliable choice for high-performance systems.

Control Technique: PULSE WIDTH MODULATION

Pulse width modulation control technique offers precise control over the output voltage, ensuring stable and reliable power delivery to the connected load.

Technical Specifications

Switching Regulators & Controllers NCP1250ASN100T1G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

28 V

Minimum Input Voltage:

9.4 V

Nominal Input Voltage:

12 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

YES

Switcher Config:

SINGLE

Maximum Switching Frequency:

108 kHz

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP1250ASN100T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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