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NCP1205P2G

Onsemi

NCP1205P2G by Onsemi

NCP1205P2G by Onsemi is a switching controller with current-mode control technique, operating b/w -25 to 85 °C. It has a max input voltage of 30 V and operates at a max switching frequency of 125 kHz. This IC is commonly used in applications requiring pulse width modulation for power regulation.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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AZTECH Wire

Italy . 782 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

Latvia . 870 parts In-Stock

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UHIMA Technologies

Türkiye . 543 parts In-Stock

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Kepictronics

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Microchip USA

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Overview

Discover the NCP1205P2G by Onsemi, a high-quality switching regulator with countless applications in various industries. Manufactured by Onsemi, a trusted leader in the field, this product offers unparalleled value and benefits to customers. With its current-mode control mode and pulse width modulation technology, the NCP1205P2G ensures efficient and reliable performance. Whether you're looking to power up your next project or upgrade existing systems, this switching controller is the perfect solution. Experience the advantages of Onsemi's cutting-edge technology with the NCP1205P2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the product to function reliably even in challenging environments.

Control Mode: CURRENT-MODE

Current-mode control ensures efficient regulation and current limiting capabilities for improved performance.

Nominal Input Voltage: 12 V

The nominal input voltage of 12V makes this product compatible with a wide range of power sources.

Maximum Switching Frequency: 125 kHz

The high maximum switching frequency enables fast response times and efficient power conversion.

Technical Specifications

Switching Regulators & Controllers NCP1205P2G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Additional Features:

ALSO HAS RESONANT CONTROL TECHNIQUE

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

30 V

Minimum Input Voltage:

8 V

Nominal Input Voltage:

12 V

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Length:

18.48 mm

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

4.69 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

NO

Switcher Config:

SINGLE

Maximum Switching Frequency:

125 kHz

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

NCP1205P2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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