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NCD5702DR2G

Onsemi

NCD5702DR2G by Onsemi

NCD5702DR2G by Onsemi is a MOSFET gate driver with 16 terminals, suitable for automotive applications. It operates b/w -40 to 125 °C and has built-in protections against transient and under voltage. With a turn-on/off time of 0.075 us, it supports a max supply voltage of 20 V and nominal voltage of 15 V.

Median Price

$1.600

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,377 parts In-Stock

1+ parts

$1.041

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2,377

$1.041

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Chip1Stop

Japan . 2,337 parts In-Stock

1+ parts

$1.470

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2,337

$1.470

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Mouser Electronics

USA . 2,164 parts In-Stock

1+ parts

$1.730

100+ parts

$1.250

1k+ parts

$1.180

10k+ parts

$1.170

2,164

$1.730

$1.250

$1.180

$1.170

DigiKey

USA . 2,500 parts In-Stock

1+ parts

$2.370

100+ parts

$1.439

1k+ parts

$1.271

10k+ parts

$1.191

2,500

$2.370

$1.439

$1.271

$1.191

Flip Electronics (Authorized)

USA . 37,500 parts In-Stock

1+ parts

-

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37,500

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Verical

USA . 2,377 parts In-Stock

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2,377

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Distributors (In-Stock)

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Digiode

USA . 844 parts In-Stock

1+ parts

$1.013

100+ parts

-

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844

$1.013

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Vyrian

USA . 806 parts In-Stock

1+ parts

$1.066

100+ parts

-

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806

$1.066

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Flip Electronics

USA . 37,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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37,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 712 parts In-Stock

1+ parts

$0.959

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-

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712

$0.959

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Corohmni

South Africa . 143 parts In-Stock

1+ parts

$1.066

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143

$1.066

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iodParts Technologies Inc.

India . 37,516 parts In-Stock

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37,516

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SupplyDigital Components

Austria . 8,349 parts In-Stock

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8,349

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Problanco Electronics

Mexico . 7,676 parts In-Stock

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7,676

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QUARKTWIN TECHNOLOGY LTD

USA . 3,064 parts In-Stock

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3,064

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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TANS Electronics

Latvia . 2,254 parts In-Stock

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2,254

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Kulean Microsystems

USA . 575 parts In-Stock

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575

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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96

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Overview

Experience the superior performance of the NCD5702DR2G MOSFET Gate Driver by Onsemi, a trusted manufacturer known for quality and reliability. Ideal for automotive applications, this compact yet powerful device offers built-in protections against transients and undervoltage, ensuring your system stays safe and secure. With a wide operating temperature range and fast turn-on/off times, this gate driver provides unmatched value and benefits to customers looking for high-performance solutions. Upgrade your design with the NCD5702DR2G and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the gate driver.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Supply Voltage: 5 V

Suitable for low voltage applications, making it versatile for a range of projects.

Built-in Protections: TRANSIENT; UNDER VOLTAGE

Enhances the reliability and safety of the gate driver by protecting it from potentially damaging events.

Temperature Grade: AUTOMOTIVE

Designed to withstand high temperatures, making it ideal for automotive applications.

Output Current Flow Direction: SOURCE AND SINK

Capable of handling both sourcing and sinking currents, providing flexibility in circuit design.

Technical Specifications

MOSFET Gate Drivers NCD5702DR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT; UNDER VOLTAGE

JESD-30 Code:

R-PDSO-G16

Length:

9.9 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

5 V

Minimum Supply Voltage:

0 V

Maximum Supply Voltage-1:

20 V

Minimum Supply Voltage-1:

13.2 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.075 us

Turn-on Time:

.075 us

Width:

3.9 mm

Trade Compliance

NCD5702DR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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