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NC7WZ14FHX-L22175

Onsemi

NC7WZ14FHX-L22175 by Onsemi

The Onsemi NC7WZ14FHX-L22175 is a CMOS logic gate with 2 functions, featuring a propagation delay of 12 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA.

Median Price

$0.128

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.128

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550

$0.128

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Flip Electronics

USA . 10,000 parts In-Stock

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Vyrian

USA . 2,062 parts In-Stock

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2,062

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Digiode

USA . 1,065 parts In-Stock

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1,065

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Distributors (Availability)

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Corohmni

South Africa . 69 parts In-Stock

1+ parts

$0.123

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69

$0.123

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Continental Prestige Electronics

USA . 4,858 parts In-Stock

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$0.128

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$0.125

4,858

$0.128

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$0.125

Argo Parts USA

USA . 1,072 parts In-Stock

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$0.128

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$0.124

1,072

$0.128

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$0.124

Microchip USA

USA . 7,153 parts In-Stock

1+ parts

$0.719

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7,153

$0.719

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AZTECH Wire

Italy . 687 parts In-Stock

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$17.547

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687

$17.547

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Semicontronic

India . 1,608 parts In-Stock

1+ parts

$40.000

100+ parts

$39.000

1k+ parts

$38.800

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1,608

$40.000

$39.000

$38.800

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Ampacity Inc.

Singapore . 384 parts In-Stock

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$44.000

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384

$44.000

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Component Stockers USA

USA . 800 parts In-Stock

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$99.990

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800

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 22,601 parts In-Stock

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22,601

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Kulean Microsystems

USA . 6,328 parts In-Stock

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Problanco Electronics

Mexico . 5,405 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,308 parts In-Stock

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TANS Electronics

Latvia . 2,307 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.125

1k+ parts

$0.122

10k+ parts

$0.119

2,000

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$0.125

$0.122

$0.119

SupplyDigital Components

Austria . 1,616 parts In-Stock

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1,616

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Corphita

USA . 1,564 parts In-Stock

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1,564

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UHIMA Technologies

Türkiye . 990 parts In-Stock

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990

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Overview

Enhance your electronic designs with the NC7WZ14FHX-L22175 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality logic gates that provide reliable performance and precision. Ideal for a wide range of applications, this product offers fast propagation delay, low power consumption, and high reliability. With its compact size and advanced technology, the NC7WZ14FHX-L22175 is the perfect choice for customers looking for efficient and effective solutions to enhance their projects. Experience the value and benefits of Onsemi's superior products with the NC7WZ14FHX-L22175.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 12 ns

Offers fast signal processing and reduces latency in the circuit.

Surface Mount: YES

Allows for easy installation and space-saving on circuit boards.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low voltage, making it energy-efficient and suitable for various applications.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ensuring reliable performance in demanding environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates efficient and reliable.

Technical Specifications

Logic Gates NC7WZ14FHX-L22175 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

14.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NC7WZ14FHX-L22175 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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