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NC7SZ58FHX-L22175

Onsemi

NC7SZ58FHX-L22175 by Onsemi

The Onsemi NC7SZ58FHX-L22175 is a CMOS Logic Gate with 2 inputs, 8.5 ns propagation delay, and 50 pF load capacitance. Ideal for applications requiring fast signal processing in compact spaces due to its small outline package style and low power consumption of 50 mA at a max supply voltage of 5.5 V.

Median Price

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Lifecycle Status

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4

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1k+

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Flip Electronics

USA . 110,000 parts In-Stock

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Vyrian

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Digiode

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Microchip USA

USA . 7,497 parts In-Stock

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AZTECH Wire

Italy . 748 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,153 parts In-Stock

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TANS Electronics

Latvia . 8,305 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Corphita

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UHIMA Technologies

Türkiye . 990 parts In-Stock

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Kulean Microsystems

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Overview

Discover the NC7SZ58FHX-L22175 by Onsemi, a high-quality logic gate that offers fast propagation delays and low power consumption. Manufactured by Onsemi, known for their reliable and innovative products, this logic gate is perfect for a wide range of applications. Whether you're designing consumer electronics, industrial equipment, or automotive systems, this product offers unmatched performance and efficiency. With its small outline and very thin profile, it's easy to integrate into your designs. Trust Onsemi for cutting-edge technology that delivers value and reliability to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to damage, ensuring the longevity of the product.

Propagation Delay At Nominal Supply: 8.5 ns

Low propagation delay ensures fast operation and efficient performance of the logic gates.

Surface Mount: YES

Surface mount capability makes installation easy and saves space on circuit boards.

Nominal Supply Voltage / Vsup (V): 2.3

Suitable nominal supply voltage for optimal functioning of the logic gates.

No. of Inputs: 2

Having 2 inputs allows for versatile logical operations to be performed.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product efficient and reliable.

Maximum Operating Temperature: 85 °C

High maximum operating temperature tolerance ensures the logic gates can be used in a variety of conditions without overheating.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature tolerance allows the logic gates to function in cold environments without issues.

Maximum Power Supply Current (ICC): 50 mA

Low power supply current requirements make the logic gates energy-efficient and cost-effective to operate.

Technical Specifications

Logic Gates NC7SZ58FHX-L22175 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

S-PDSO-N6

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

14.5 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NC7SZ58FHX-L22175 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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