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NC7SP17L6X-L22780

Onsemi

NC7SP17L6X-L22780 by Onsemi

The Onsemi NC7SP17L6X-L22780 is a CMOS logic gate with 46.3 ns propagation delay, suitable for industrial applications. It operates at supply voltages of 1.2V to 3.3V and has a load capacitance of 30 pF, making it ideal for high-speed signal processing in compact electronic devices. With a small outline package and dual terminals, this Schmitt Trigger gate offers efficient performance in space-constrained environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,880 parts In-Stock

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Digiode

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Microchip USA

USA . 6,764 parts In-Stock

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$0.828

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$0.828

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AZTECH Wire

Italy . 927 parts In-Stock

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$15.470

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QUARKTWIN TECHNOLOGY LTD

USA . 22,833 parts In-Stock

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TANS Electronics

Latvia . 6,210 parts In-Stock

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Problanco Electronics

Mexico . 4,044 parts In-Stock

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SupplyDigital Components

Austria . 1,812 parts In-Stock

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Kulean Microsystems

USA . 1,498 parts In-Stock

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UHIMA Technologies

Türkiye . 990 parts In-Stock

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Corphita

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Corohmni

South Africa . 193 parts In-Stock

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Overview

Discover the innovative NC7SP17L6X-L22780 by Onsemi, a top-quality logic gate designed to deliver exceptional performance in various applications. With a focus on precision and reliability, Onsemi has crafted this product to meet the demands of modern technology. From industrial automation to consumer electronics, this logic gate offers unparalleled value and efficiency, making it a must-have for professionals seeking cutting-edge solutions. Upgrade your projects with the NC7SP17L6X-L22780 and experience the difference that Onsemi's expertise can bring to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package, making the product suitable for various applications.

Propagation Delay At Nominal Supply: 46.3 ns

Fast propagation delay ensures quick response times in logic operations.

Surface Mount: YES

Ease of mounting on PCBs for efficient assembly processes.

Nominal Supply Voltage / Vsup (V): 1.1

Low supply voltage requirement for energy-efficient operation.

Load Capacitance (CL): 30 pF

Optimized load capacitance for stable performance in a variety of circuit configurations.

Power Supplies (V): 1.2/3.3

Compatible with multiple power supply voltages for flexibility in system design.

No. of Terminals: 6

Sufficient number of terminals for connecting to external components and circuits.

Maximum I (ol): 0.5 Amp

High output current capability for driving external loads.

Minimum Operating Temperature: -40 °C

Wide operating temperature range suitable for harsh environments.

Schmitt Trigger: YES

Includes Schmitt trigger functionality for noise immunity and signal conditioning.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Logic Gates NC7SP17L6X-L22780 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

P

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

.5 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/3.3

Propagation Delay At Nominal Supply:

46.3 ns

Propagation Delay (tpd):

46.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NC7SP17L6X-L22780 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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