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NBXSPA008LNHTAG

Onsemi

NBXSPA008LNHTAG by Onsemi

NBXSPA008LNHTAG by Onsemi is a LVDS XO Clock Oscillator with 161.1328 MHz frequency, 50% stability, and 3.63 V max supply voltage. Ideal for applications requiring precise timing in temperature-sensitive environments due to its wide operating range from -40 °C to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,804 parts In-Stock

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Digiode

USA . 1,702 parts In-Stock

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AZTECH Wire

Italy . 193 parts In-Stock

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TANS Electronics

Latvia . 2,714 parts In-Stock

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Corphita

USA . 2,336 parts In-Stock

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Problanco Electronics

Mexico . 2,009 parts In-Stock

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UHIMA Technologies

Türkiye . 863 parts In-Stock

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Microchip USA

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Kulean Microsystems

USA . 355 parts In-Stock

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Corohmni

South Africa . 333 parts In-Stock

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SupplyDigital Components

Austria . 73 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the NBXSPA008LNHTAG by Onsemi. Crafted with precision and expertise, this XO Clock Oscillator boasts a 50% frequency stability and LVDS oscillator type, ensuring reliable and accurate timing. Perfect for a range of applications, from communication systems to industrial equipment, this product offers unparalleled value with its high-quality construction and advanced features. Trust Onsemi to deliver excellence with every product, and experience the benefits of superior performance and efficiency with the NBXSPA008LNHTAG. Elevate your technology today!

Feature Benefit Bullets

Frequency Stability: 50 %

Provides a high level of stability in frequency, ensuring accurate timekeeping and reliable performance in various applications.

Maximum Supply Voltage: 3.63 V

Allows a wide operating range, making it compatible with a variety of systems and power sources.

Output Load: 100 OHM

Designed to work efficiently with a standard load, ensuring optimal performance and signal integrity.

Oscillator Type: LVDS

Utilizes LVDS technology for low voltage differential signaling, offering high-speed data transmission and noise reduction benefits.

Nominal Operating Frequency: 161.1328 MHz

Provides a precise frequency output, making it ideal for applications that require accurate timing and synchronization.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, allowing for reliable performance in challenging environmental conditions.

Physical Dimension: 7.0mm x 5.0mm x 1.9mm

Compact size enables easy integration into electronic devices, saving space and facilitating PCB layout.

Technical Specifications

XO Clock Oscillators NBXSPA008LNHTAG attributes and parameters. Explore more XO Clock Oscillators devices from Onsemi

Specs

Additional Features:

SUPPLY VOLTAGE 2.5V ALSO POSSIBLE; TRI-STATE; E/D FUNCTION; DIFFERENTIAL O/P; TAPE AND REEL

Maximum Fall Time:

.4 ns

Frequency Adjustment (Mechanical):

NO

Frequency Stability:

Mounting Feature:

No. of Terminals:

6

Nominal Operating Frequency:

161.1328 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Oscillator Type:

Output Load:

100 OHM

Physical Dimension:

7.0mm x 5.0mm x 1.9mm

Maximum Rise Time:

.4 ms

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Maximum Symmetry (%):

52/48

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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