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NBXSBA031LNH1NG

Onsemi

NBXSBA031LNH1NG by Onsemi

NBXSBA031LNH1NG by Onsemi is a LVPECL XO Clock Oscillator with 340MHz frequency, 50% stability, and 3.63V max supply voltage. Ideal for applications requiring precise timing in electronic circuits with surface mounting feature.

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Digiode

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Vyrian

USA . 905 parts In-Stock

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TANS Electronics

Latvia . 7,613 parts In-Stock

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SupplyDigital Components

Austria . 7,606 parts In-Stock

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Problanco Electronics

Mexico . 3,652 parts In-Stock

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Corphita

USA . 2,219 parts In-Stock

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Kulean Microsystems

USA . 1,742 parts In-Stock

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UHIMA Technologies

Türkiye . 232 parts In-Stock

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Corohmni

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Overview

Discover the cutting-edge NBXSBA031LNH1NG XO Clock Oscillator by Onsemi, offering unparalleled quality and reliability for your electronic applications. Manufactured by a trusted brand, this oscillator boasts a 50% frequency stability and LVPECL technology for seamless performance. From telecommunications to industrial automation, this product is versatile and efficient, ensuring precise timing for your devices. Upgrade your equipment with the NBXSBA031LNH1NG and experience the value of superior craftsmanship and innovation in every use.

Feature Benefit Bullets

Frequency Stability: 50%

This high frequency stability ensures that the clock signal remains accurate and consistent, making it ideal for applications requiring precise timing.

Maximum Supply Voltage: 3.63 V

The high maximum supply voltage allows for flexibility in various voltage requirements, making this oscillator compatible with a wide range of systems.

Output Load: 50 OHM

The low output load of 50 OHM ensures efficient signal transmission and minimizes signal distortion, making this oscillator reliable for high-speed data applications.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3 V is a commonly used voltage level in many electronic systems, ensuring easy integration with existing circuits.

Oscillator Type: LVPECL

The LVPECL oscillator type offers low voltage differential signaling, providing high-speed and low-power operation, making it suitable for applications that require fast data transmission with minimal power consumption.

No. of Terminals: 6

Having 6 terminals allows for easy connection and integration into circuit boards, making installation and maintenance hassle-free.

Maximum Rise Time: 0.4 ms

The fast rise time of 0.4 ms ensures quick signal transitions, making this oscillator suitable for high-speed applications that require fast response times.

Physical Dimension: 7.0mm x 5.0mm x 1.9mm

The compact size of the oscillator makes it easy to fit into space-constrained environments, making it a good choice for compact electronic devices.

Minimum Supply Voltage: 2.97 V

The low minimum supply voltage ensures efficient power consumption, making this oscillator suitable for battery-powered devices or applications where power efficiency is crucial.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance even in high-temperature environments, making this oscillator suitable for industrial and automotive applications.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40 to 85 °C ensures reliable performance in extreme temperature conditions, making this oscillator suitable for outdoor or harsh environment applications.

Nominal Operating Frequency: 340 MHz

The high nominal operating frequency of 340 MHz makes this oscillator suitable for high-speed applications that require fast data processing and transmission.

Maximum Fall Time: 0.4 ns

The fast fall time of 0.4 ns ensures quick signal transitions, making this oscillator ideal for applications that demand fast response times and minimal signal delay.

Maximum Symmetry (%): 52/48

The high symmetry of 52/48 ensures balanced signal output with equal rise and fall characteristics, making this oscillator suitable for applications requiring precise timing and signal integrity.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation on PCBs, making it suitable for mass production and automated assembly processes.

Technical Specifications

XO Clock Oscillators NBXSBA031LNH1NG attributes and parameters. Explore more XO Clock Oscillators devices from Onsemi

Specs

Additional Features:

SUPPLY VOLTAGE 2.5V ALSO POSSIBLE; TRI-STATE; E/D FUNCTION; DIFFERENTIAL O/P; TAPE AND REEL

Maximum Fall Time:

.4 ns

Frequency Adjustment (Mechanical):

NO

Frequency Stability:

Mounting Feature:

No. of Terminals:

6

Nominal Operating Frequency:

340 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Oscillator Type:

Output Load:

50 OHM

Physical Dimension:

7.0mm x 5.0mm x 1.9mm

Maximum Rise Time:

.4 ms

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Maximum Symmetry (%):

52/48

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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