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NBC12430AMNR4G

Onsemi

NBC12430AMNR4G by Onsemi

NBC12430AMNR4G clock generator by Onsemi operates at a max output frequency of 800 MHz with supply voltages of 3.3/5 V. This CMOS technology chip carrier is ideal for industrial applications requiring precise clock generation in a compact, surface-mount package. With a wide temperature range from -40 to 85 °C, it offers reliable performance in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,441 parts In-Stock

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Digiode

USA . 1,934 parts In-Stock

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AZTECH Wire

Italy . 1,110 parts In-Stock

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$22.010

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Problanco Electronics

Mexico . 7,323 parts In-Stock

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Kulean Microsystems

USA . 6,705 parts In-Stock

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Corphita

USA . 1,340 parts In-Stock

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UHIMA Technologies

Türkiye . 741 parts In-Stock

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TANS Electronics

Latvia . 731 parts In-Stock

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SupplyDigital Components

Austria . 660 parts In-Stock

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Corohmni

South Africa . 391 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic devices with the NBC12430AMNR4G clock generator by Onsemi, a top-notch manufacturer known for quality products. Ideal for a variety of applications, this clock generator offers precision and reliability, ensuring optimal performance. With a maximum output clock frequency of 800 MHz and a wide operating temperature range, this product delivers unparalleled value to customers seeking efficiency and durability. Upgrade your systems with Onsemi's clock generator and experience seamless functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards.

Maximum Supply Voltage: 3.465 V

The high maximum supply voltage ensures compatibility with a wide range of systems.

Maximum Output Clock Frequency: 800 MHz

The high maximum output clock frequency allows for fast and efficient operation.

Power Supplies (V): 3.3/5

The ability to accept multiple power supply voltages gives flexibility in system design.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature makes the product suitable for industrial environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for reliable performance in cold conditions.

Technology: CMOS

The use of CMOS technology ensures low power consumption and reliable operation.

Technical Specifications

Clock Generators NBC12430AMNR4G attributes and parameters. Explore more Clock Generators devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e3

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Clock Frequency:

800 MHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Nominal Primary Clock/Crystal Frequency:

20 MHz

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Clock Generators

Maximum Supply Current:

85 mA

Maximum Supply Voltage:

3.465 V

Minimum Supply Voltage:

3.135 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Peripheral IC Type:

Trade Compliance

NBC12430AMNR4G Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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