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NBA3N201SDG

Onsemi

NBA3N201SDG by Onsemi

NBA3N201SDG by Onsemi is a Line Transceiver with 8 terminals, operating at 3.3V nominal voltage. It offers differential output and input characteristics, with max transmit delay of 2.4ns. Ideal for automotive applications due to AEC-Q100 screening level and small outline package style.

Median Price

$0.898

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 3 parts In-Stock

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$0.838

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$0.838

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Arrow

USA . 3 parts In-Stock

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$0.959

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$0.959

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Digiode

USA . 1,285 parts In-Stock

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$0.447

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$0.447

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Vyrian

USA . 7,817 parts In-Stock

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Corphita

USA . 520 parts In-Stock

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$0.424

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520

$0.424

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Corohmni

South Africa . 398 parts In-Stock

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$0.471

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398

$0.471

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AZTECH Wire

Italy . 499 parts In-Stock

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$21.320

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499

$21.320

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 6,884 parts In-Stock

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SupplyDigital Components

Austria . 5,927 parts In-Stock

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TANS Electronics

Latvia . 3,017 parts In-Stock

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Kulean Microsystems

USA . 1,339 parts In-Stock

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UHIMA Technologies

Türkiye . 544 parts In-Stock

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Perfect Parts

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Microchip USA

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Overview

Maximize the efficiency and reliability of your automotive electronics with the NBA3N201SDG line driver & receiver from Onsemi. Crafted with quality materials and cutting-edge technology, this small outline package delivers lightning-fast transmit delay of 2.4 ns and a maximum supply current of 24 mA, all while operating in temperatures as low as -40 °C. Perfect for automotive applications, this product offers differential outputs and complementary polarity, ensuring seamless integration and optimal performance. Elevate your designs with the superior value and benefits that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the product.

Surface Mount: YES

Allows for easy and efficient installation on a circuit board.

Maximum Supply Voltage: 3.6 V

Can handle a wide range of supply voltages, making it versatile for different applications.

Screening Level: AEC-Q100

Designed to meet automotive industry standards for reliability and performance.

Maximum Transmit Delay: 2.4 ns

Ensures fast and efficient data transmission.

No. of Terminals: 8

Provides multiple connection points for a secure and stable connection.

Output Characteristics: DIFFERENTIAL

Offers improved noise rejection and signal integrity.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions, suitable for a variety of environments.

Maximum Output Low Current: 8 Amp

Can drive high current loads.

Nominal Supply Voltage: 3.3 V

Operates efficiently at a common supply voltage level.

Technical Specifications

Line Drivers & Receivers NBA3N201SDG attributes and parameters. Explore more Line Drivers & Receivers devices from Onsemi

Specs

Differential Output:

YES

Maximum High Level Input Current:

.00001 Amp

Input Characteristics:

DIFFERENTIAL

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Minimum Out Swing:

2 V

Output Characteristics:

DIFFERENTIAL

Maximum Output Low Current:

8 Amp

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Receive Delay:

6 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Current:

24 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Transmit Delay:

2.4 ns

Width:

3.9 mm

Trade Compliance

NBA3N201SDG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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