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NB3H63143GXXMNR2G

Onsemi

NB3H63143GXXMNR2G by Onsemi

NB3H63143GXXMNR2G clock generator by Onsemi operates at a max frequency of 200 MHz with supply voltage range of 2.25-2.75 V. This CMOS technology chip carrier is ideal for industrial applications requiring precise clock generation in compact spaces, featuring a quad terminal position and very thin profile package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,230 parts In-Stock

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Vyrian

USA . 1,558 parts In-Stock

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Kulean Microsystems

USA . 4,346 parts In-Stock

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TANS Electronics

Latvia . 3,774 parts In-Stock

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SupplyDigital Components

Austria . 3,503 parts In-Stock

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Corphita

USA . 841 parts In-Stock

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Problanco Electronics

Mexico . 431 parts In-Stock

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UHIMA Technologies

Türkiye . 367 parts In-Stock

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Corohmni

South Africa . 227 parts In-Stock

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Overview

Enhance your electronic devices with the NB3H63143GXXMNR2G by Onsemi, a top-notch clock generator that guarantees precision and reliability. Manufactured by Onsemi, a renowned leader in semiconductor technology, this clock generator is perfect for a wide range of applications. With its high-quality construction and advanced features, this product offers exceptional value to customers looking for superior performance and functionality in their devices. Upgrade your electronics today with the NB3H63143GXXMNR2G and experience the benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Being made of plastic/epoxy, the package body material ensures durability and protection for the internal components of the clock generator.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation of the clock generator onto circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 2.75 V

The high maximum supply voltage of 2.75V provides flexibility and compatibility with a wide range of power sources, making the clock generator versatile in various applications.

Package Shape: SQUARE

The square package shape helps in saving space on the circuit board, allowing for more efficient usage of the available area and enabling compact device designs.

Maximum Output Clock Frequency: 200 MHz

With a high maximum output clock frequency of 200 MHz, this clock generator is suitable for applications requiring fast and precise timing signals.

No. of Terminals: 16

Having 16 terminals provides multiple connection options and flexibility in interfacing the clock generator with other components in the circuit.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making the clock generator efficient and reliable in various operating conditions.

Nominal Primary Clock/Crystal Frequency: 50 MHz

The nominal primary clock/crystal frequency of 50 MHz offers stable and accurate timing signals, ensuring precise synchronization in electronic systems.

Technical Specifications

Clock Generators NB3H63143GXXMNR2G attributes and parameters. Explore more Clock Generators devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-N16

Length:

3 mm

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Clock Frequency:

200 MHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Nominal Primary Clock/Crystal Frequency:

50 MHz

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3 mm

Trade Compliance

NB3H63143GXXMNR2G Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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