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MURS260T3

Onsemi

MURS260T3 by Onsemi

MURS260T3 by Onsemi is a single rectifier diode with a max output current of 2A and a max repetitive peak reverse voltage of 600V. It is designed for high voltage ultra-fast recovery power applications, featuring a small outline package style and tin/lead terminal finish. With a max operating temperature of 175°C, it offers fast 0.075us reverse recovery time for efficient performance.

Median Price

$0.920

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 150 parts In-Stock

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$0.920

100+ parts

$0.690

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$0.600

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150

$0.920

$0.690

$0.600

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Chip Stock

USA . 380,795 parts In-Stock

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Vyrian

USA . 7,420 parts In-Stock

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Digiode

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Bristol Electronics

USA . 101 parts In-Stock

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Atlantic Semiconductor

USA . 101 parts In-Stock

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Nova Conductors

Japan . 26 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 275 parts In-Stock

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$0.920

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275

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Ampacity Inc.

Singapore . 740 parts In-Stock

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$2.010

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740

$2.010

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AZTECH Wire

Italy . 226 parts In-Stock

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$7.778

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QUARKTWIN TECHNOLOGY LTD

USA . 26,343 parts In-Stock

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Lixinc

USA . 7,693 parts In-Stock

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Kulean Microsystems

USA . 6,420 parts In-Stock

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Problanco Electronics

Mexico . 6,349 parts In-Stock

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Corphita

USA . 1,318 parts In-Stock

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TANS Electronics

Latvia . 1,174 parts In-Stock

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UHIMA Technologies

Türkiye . 676 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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SupplyDigital Components

Austria . 37 parts In-Stock

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Overview

Enhance your power applications with the MURS260T3 diode by Onsemi. This high-quality rectifier diode offers ultra-fast recovery power, making it ideal for high voltage systems. With a maximum output current of 2A and a maximum repetitive peak reverse voltage of 600V, this diode ensures reliable performance in demanding conditions. Trust in Onsemi's expertise in diodes and rectifiers to deliver superior quality and value for your projects. Elevate your designs with the MURS260T3 diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Single configuration makes it easy to incorporate this diode into various circuit designs.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and space.

Maximum Reverse Recovery Time: 0.075 us

Ultra-fast reverse recovery time ensures efficient and smooth operation in high voltage applications.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and mounting on PCBs.

No. of Terminals: 2

Simplified connection with only two terminals, reducing complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the PCB, ideal for applications with limited space.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Specifically designed for high voltage and ultra-fast recovery power applications, ensuring reliable operation in demanding conditions.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments and applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish provides good solderability for easy installation on PCBs.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connection and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes heat exposure, reducing the risk of damage during assembly.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures reliable solder joints during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC power to DC power in various electronic applications.

Maximum Forward Voltage (VF): 1.45 V

Low forward voltage drop across the diode ensures efficient power conversion.

Maximum Output Current: 2 A

High output current capability makes it suitable for power applications.

Terminal Form: C BEND

C bend terminal form provides a secure connection and ease of soldering during installation.

Maximum Repetitive Peak Reverse Voltage: 600 V

High reverse voltage rating provides protection in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 35 A

High peak forward current rating allows for handling sudden spikes in current without damage.

Diode Element Material: SILICON

Silicon material ensures high efficiency and reliability in power conversion applications.

Technical Specifications

Diodes & Rectifiers MURS260T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.45 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURS260T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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