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MURS205T3

Onsemi

MURS205T3 by Onsemi

MURS205T3 by Onsemi is a single rectifier diode with a max output current of 2A and forward voltage of 0.74V. It has a fast reverse recovery time of 0.03us, making it suitable for applications requiring high-speed switching in small outline packages. Operating at up to 175 °C, it is ideal for surface mount designs where space and temperature constraints are critical.

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Lifecycle Status

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7

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1k+

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Chip Stock

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Dan-Mar Components

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Bristol Electronics

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Vyrian

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ACDS - Activité Composants Distribution Service

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Digiode

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Prism Electronics

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AZTECH Wire

Italy . 1,051 parts In-Stock

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Component Stockers USA

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$99.990

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Problanco Electronics

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Perfect Parts

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SupplyDigital Components

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Kulean Microsystems

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TANS Electronics

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Glotronic Ltd.

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Corphita

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UHIMA Technologies

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Overview

Unleash the power of reliable and efficient electronics with the MURS205T3 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes & rectifiers that are versatile and easy to use. Whether you're working on a personal project or a professional application, this product offers unbeatable value with its high performance and durability. Say goodbye to frustrating malfunctions and hello to seamless operation with the MURS205T3. Elevate your electronics game today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Simplicity in configuration makes it easy to integrate into different circuit designs.

Surface Mount: YES

Allows for easy and convenient mounting onto circuit boards.

Maximum Reverse Recovery Time: 0.03 us

Fast reverse recovery time ensures efficient operation and reduced power loss.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without compromising performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for converting AC to DC efficiently.

Maximum Forward Voltage (VF): 0.74 V

Low forward voltage drop helps in minimizing power loss and improving efficiency.

Maximum Output Current: 2 A

Capable of handling moderate to high current loads in a circuit.

Maximum Repetitive Peak Reverse Voltage: 50 V

Suitable for applications requiring reverse voltage protection up to 50 volts.

Diode Element Material: SILICON

Silicon diodes are known for their reliability and efficiency in electronic circuits.

Technical Specifications

Diodes & Rectifiers MURS205T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.74 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURS205T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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