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MUR3060PT

Onsemi

MUR3060PT by Onsemi

MUR3060PT by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.06 us. Ideal for power applications, it has a max output current of 15A and can handle up to 600V peak repetitive reverse voltage. The diode's package style is flange mount with a rectangular shape made of plastic/epoxy material.

Median Price

$0.917

Lifecycle Status

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16

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Nova Conductors

Japan . 300 parts In-Stock

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LittleDiode

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Fibra_Brandt Electronic GMBH

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ABC Electronics Ltd.

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Resion

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MISTER SPROCKETS

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Holdelec - ElecDif-Pro

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Argo Parts USA

USA . 5,064 parts In-Stock

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Continental Prestige Electronics

USA . 3,767 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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Netroflash

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Microchip USA

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AZTECH Wire

Italy . 595 parts In-Stock

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Formix International (Excess)

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Overview

Unleash the power of innovation with the MUR3060PT diode rectifier by Onsemi. Crafted with precision and expertise, this high-quality product offers reliable performance and efficiency in power applications. With a maximum repetitive peak reverse voltage of 600V and a maximum forward voltage of 1.5V, this diode is designed to deliver exceptional results. Whether you're looking to enhance your power systems or improve energy efficiency, the MUR3060PT is the perfect solution. Trust in Onsemi's legacy of excellence and choose the MUR3060PT for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the diodes, ensuring long-term reliability and ease of handling.

Maximum Reverse Recovery Time: 0.06 us

Fast reverse recovery time ensures efficient operation and reduces energy loss.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures, making it suitable for power applications where heat dissipation is important.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used in power applications due to their ability to convert alternating current (AC) to direct current (DC) effectively.

Maximum Forward Voltage (VF): 1.5 V

Low forward voltage drop minimizes power loss and improves efficiency.

Maximum Output Current: 15 A

Capable of handling high currents, making it suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

Can withstand high reverse voltages, ensuring durability and reliability in power circuit applications.

Diode Element Material: SILICON

Silicon diodes are widely used in power applications due to their reliability, high efficiency, and fast operation.

Technical Specifications

Diodes & Rectifiers MUR3060PT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-218AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MUR3060PT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-441-3529, 5961014413529

NIIN

014413529

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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