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MUR3020PTG

Onsemi

MUR3020PTG by Onsemi

MUR3020PTG by Onsemi is a common cathode rectifier diode with 2 elements, offering a max output current of 15A and a max repetitive peak reverse voltage of 200V. It is designed for power applications, with an operating temperature range from -65 °C to 175°C.

Median Price

$5.600

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 56 parts In-Stock

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$5.600

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$2.614

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56

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Vyrian

USA . 5,057 parts In-Stock

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Digiode

USA . 551 parts In-Stock

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LWI Electronics Inc

India . 153 parts In-Stock

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Cyclops Electronics Ltd

UK . 142 parts In-Stock

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ComSIT Distribution GmbH

Germany . 14 parts In-Stock

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EMSNET

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Distributors (Availability)

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Component Stockers USA

USA . 2,179 parts In-Stock

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$1.220

100+ parts

$1.160

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$1.120

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2,179

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AZTECH Wire

Italy . 512 parts In-Stock

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$14.500

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512

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Metaverse IC Inc.

Canada . 14,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,433 parts In-Stock

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TANS Electronics

Latvia . 7,708 parts In-Stock

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Problanco Electronics

Mexico . 6,355 parts In-Stock

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SupplyDigital Components

Austria . 5,062 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 1,374 parts In-Stock

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Futuretech Components

Singapore . 750 parts In-Stock

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Kulean Microsystems

USA . 662 parts In-Stock

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Corohmni

South Africa . 413 parts In-Stock

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ChipstoGo Electronic ltd

UK . 390 parts In-Stock

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Kepictronics

USA . 390 parts In-Stock

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UHIMA Technologies

Türkiye . 339 parts In-Stock

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Perfect Parts

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Overview

Elevate your power management solutions with the MUR3020PTG from Onsemi. As a leading manufacturer in the field of diodes and rectifiers, Onsemi delivers top-quality products that are designed for power applications. The MUR3020PTG features a common cathode configuration with two elements, offering customers seamless integration and reliable performance. With a maximum output current of 15A and a maximum repetitive peak reverse voltage of 200V, this rectangular package diode is perfect for power-intensive tasks. Trust Onsemi to provide you with the best-in-class components for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the diodes, ensuring better durability and reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy integration and connection in circuits, simplifying the overall design.

Maximum Reverse Recovery Time: 0.035 us

Fast reverse recovery time ensures efficient switching performance and reduces power losses in the circuit.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor, making it suitable for space-constrained applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for reliable performance in tough environmental conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for power applications, providing smooth rectification of AC to DC voltage.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop of 1V ensures minimal power loss and efficient energy conversion.

Maximum Output Current: 15 A

High output current rating of 15A enables the diode to handle large power loads with ease.

Maximum Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating of 200V ensures the diode can withstand reverse voltage spikes and surges, increasing circuit reliability.

Diode Element Material: SILICON

Silicon material offers good electrical properties and high temperature tolerance, making it suitable for power applications.

Technical Specifications

Diodes & Rectifiers MUR3020PTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

TO-218AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

MUR3020PTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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