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MTD5P06VT4

Onsemi

MTD5P06VT4 by Onsemi

MTD5P06VT4 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage and 18A IDM. Ideal for SWITCHING applications, it features a 0.45 ohm Max RDS(on) and 125mJ EAS rating. This SINGLE configuration transistor operates in ENHANCEMENT MODE at up to 175°C, making it suitable for various power management tasks.

Median Price

$0.800

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 377 parts In-Stock

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$0.220

100+ parts

$0.231

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$0.218

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377

$0.220

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DF Sales Co.

USA . 478 parts In-Stock

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$0.800

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478

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DF Sales Co.

USA . 478 parts In-Stock

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$0.800

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478

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Chip Stock

USA . 15,000 parts In-Stock

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Bristol Electronics

USA . 2,656 parts In-Stock

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Atlantic Semiconductor

USA . 2,424 parts In-Stock

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Digiode

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Greenchips

USA . 1,150 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 1,150 parts In-Stock

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Vyrian

USA . 315 parts In-Stock

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Sunrise Surplus Inc.

USA . 225 parts In-Stock

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Resion

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Electronics Depot

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Semtec, LLC

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Prism Electronics

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Corohmni

South Africa . 233 parts In-Stock

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$0.220

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Aztec Data Supply Inc.

USA . 765 parts In-Stock

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$1.620

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$1.620

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Ampacity Inc.

Singapore . 549 parts In-Stock

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$2.050

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$2.050

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AZTECH Wire

Italy . 315 parts In-Stock

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$19.532

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Component Stockers USA

USA . 602 parts In-Stock

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$99.990

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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Kulean Microsystems

USA . 6,387 parts In-Stock

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TANS Electronics

Latvia . 5,699 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Problanco Electronics

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 625 parts In-Stock

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Aranea Global

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Overview

Discover the power and efficiency of the MTD5P06VT4 by Onsemi. Manufactured with precision and quality in mind, this P-Channel Power Field Effect Transistor is the perfect solution for your switching applications. With a maximum drain current of 5A and a minimum breakdown voltage of 60V, this transistor offers exceptional performance and reliability. Say goodbye to overheating issues with its maximum power dissipation of 40W. Trust in Onsemi to deliver top-notch technology that exceeds expectations. Experience the difference with the MTD5P06VT4 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the FET suitable for a wide range of applications.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching of power in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and can save space by eliminating the need for a separate diode.

Transistor Application: SWITCHING

Specifically designed for switching applications, offering optimal performance in such scenarios.

Surface Mount: YES

Facilitates easy and efficient mounting on PCBs, reducing assembly time and space usage.

Minimum DS Breakdown Voltage: 60 V

Ensures the FET can handle higher voltages, enhancing reliability and safety in various applications.

Package Shape: RECTANGULAR

Allows for convenient placement and mounting on the PCB, optimizing space utilization.

Terminal Form: GULL WING

Enables secure and reliable connections with the PCB, reducing the risk of detachment or signal loss.

Operating Mode: ENHANCEMENT MODE

Provides improved control over the FET's operation, enhancing efficiency and performance in switching applications.

Maximum Pulsed Drain Current (IDM): 18 A

Capable of handling high current pulses, making it suitable for applications requiring high-power switching.

Avalanche Energy Rating (EAS): 125 mJ

Ensures reliable performance under high energy conditions, enhancing overall durability and longevity of the FET.

Maximum Drain Current (Abs) (ID): 5 A

Sufficient current capacity for a wide range of applications, ensuring versatility and reliability.

Maximum Power Dissipation (Abs): 40 W

Capable of dissipating heat efficiently, maintaining stable operation even under high power conditions.

Package Style (Meter): SMALL OUTLINE

Compact design for efficient use of space and easy integration into various electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers efficient performance and reliability in a wide range of operating conditions.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, ensuring stable operation in demanding environments.

Transistor Element Material: SILICON

Provides reliable performance and durability, making the FET suitable for long-term use.

Terminal Finish: Tin/Lead (Sn80Pb20)

Ensures reliable connections and solder joints, enhancing the FET's overall performance and longevity.

Maximum Drain Current (ID): 5 A

Sufficient current capacity for a wide range of applications, ensuring versatility and reliability.

Maximum Drain-Source On Resistance: 0.45 ohm

Low on-resistance minimizes power loss and heat generation, improving overall efficiency.

Terminal Position: SINGLE

Simplifies installation and connection, allowing for easy integration into the circuit.

Case Connection: DRAIN

Specific terminal connection for efficient power flow and control in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and PCB mounting, enhancing the FET's reliability and performance.

Peak Reflow Temperature °C: 235

Compatible with common reflow soldering processes, making assembly easy and efficient.

Technical Specifications

Power Field Effect Transistors (FET) MTD5P06VT4 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

125 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.45 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

18 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MTD5P06VT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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