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MPSA13G

Onsemi

MPSA13G by Onsemi

MPSA13G by Onsemi is a NPN Darlington BJT with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 10k and can handle up to 1.5W power dissipation. With a max operating temperature of 150°C and collector-emitter voltage of 30V, it is suitable for various electronic circuits.

Median Price

$0.061

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 60 parts In-Stock

1+ parts

$0.061

100+ parts

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60

$0.061

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ComSIT USA

USA . 10,000 parts In-Stock

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10,000

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ComSIT Distribution GmbH

Germany . 7,500 parts In-Stock

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7,500

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Chip Stock

USA . 5,500 parts In-Stock

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5,500

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ACDS - Activité Composants Distribution Service

France . 4,186 parts In-Stock

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4,186

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Vyrian

USA . 1,467 parts In-Stock

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1,467

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Digiode

USA . 1,225 parts In-Stock

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1,225

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EMSNET

USA . 593 parts In-Stock

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593

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Bristol Electronics

USA . 500 parts In-Stock

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500

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Semtec, LLC

USA . 106 parts In-Stock

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106

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Ashlea Components Ltd

UK . 90 parts In-Stock

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90

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Semi Source

USA . 24 parts In-Stock

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24

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 348 parts In-Stock

1+ parts

$0.059

100+ parts

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348

$0.059

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.060

100+ parts

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1k+ parts

$0.057

10k+ parts

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100

$0.060

-

$0.057

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Continental Prestige Electronics

USA . 6,896 parts In-Stock

1+ parts

$0.061

100+ parts

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$0.060

6,896

$0.061

-

-

$0.060

Argo Parts USA

USA . 2,479 parts In-Stock

1+ parts

$0.061

100+ parts

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$0.059

2,479

$0.061

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$0.059

Ampacity Inc.

Singapore . 185 parts In-Stock

1+ parts

$2.050

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185

$2.050

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AZTECH Wire

Italy . 1,177 parts In-Stock

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$13.747

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1,177

$13.747

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Perfect Parts

USA . 41,913 parts In-Stock

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41,913

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Metaverse IC Inc.

Canada . 14,705 parts In-Stock

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14,705

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Lixinc

USA . 13,330 parts In-Stock

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13,330

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A-Z Elektronik GmbH

Germany . 6,398 parts In-Stock

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6,398

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Cyclops Electronics Ltd (Excess)

UK . 4,186 parts In-Stock

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4,186

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Kulean Microsystems

USA . 3,995 parts In-Stock

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3,995

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Glotronic Ltd.

UK . 3,349 parts In-Stock

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3,349

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SupplyDigital Components

Austria . 2,841 parts In-Stock

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2,841

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Corphita

USA . 1,588 parts In-Stock

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1,588

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TANS Electronics

Latvia . 1,196 parts In-Stock

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1,196

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Futuretech Components

Singapore . 882 parts In-Stock

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882

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UHIMA Technologies

Türkiye . 487 parts In-Stock

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487

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Problanco Electronics

Mexico . 429 parts In-Stock

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429

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Amble Industries

USA . 136 parts In-Stock

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136

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Overview

Experience the superior performance and reliability of the MPSA13G Small Signal Bipolar Junction Transistor by Onsemi. Designed with precision and quality in mind, this NPN Darlington transistor is perfect for amplifier applications. With a high DC current gain and maximum power dissipation, this transistor offers unmatched value and efficiency. Trust Onsemi's reputation for excellence and choose the MPSA13G for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, which is ideal for portable electronics and applications where weight and durability are important.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and allows for minimal input current to control a larger output current, making this transistor efficient and suitable for high-gain applications.

Maximum Power Dissipation (Abs): 1.5 W

With a maximum power dissipation of 1.5W, this transistor can handle higher power levels, making it suitable for applications that require higher power capabilities.

Minimum DC Current Gain (hFE): 10000

The high DC current gain of 10,000 ensures efficient amplification and signal processing, making this transistor ideal for applications where high gain is required.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate reliably in demanding environments and high-temperature conditions.

Maximum Collector-Emitter Voltage: 30 V

The maximum collector-emitter voltage of 30V provides a high voltage capability, making this transistor suitable for applications that require higher voltage handling.

Nominal Transition Frequency (fT): 125 MHz

With a high nominal transition frequency of 125MHz, this transistor is capable of handling high-frequency signals, making it ideal for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA13G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA13G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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